Dependence of thin-film media microstructure and recording properties on composition of very thin Cr-based seedlayers

Satoru Yoshimura, David D. Djayaprawira, Masaki Mikami, Yuji Takakuwa, Migaku Takahashi

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

WCr100-X (X = 0-100) and CrTi15 seedlayers with a thickness of 0.5 nm have been utilized to reduce the grain size of CoCrPtB-CrMo longitudinal media. It is found that the media grain size and the media noise are reduced when using WCr100-X (X = 0, 25, 50) seedlayers and not reduced when using CrTi15 or WCr100-X (X = 75, 100) seedlayer. Auger electron spectroscope (AES) analysis results show that the critical thickness just before W, WCr50 and Cr seedlayers become continuous layer are 1.5, 2.5, and 5 nm, respectively. Reflection high-energy electron diffraction (RHEED) analysis shows that the structure of 2.0-nm W film is consisted of very small two-dimensional random oriented crystal grains. This result suggests that W seedlayer, which has the highest melting point, forms a layer-like film with very small and dense island grains, due to its high free surface energy and low mobility. On the other hand, WCr50 and Cr seedlayers, which have a lower melting point than W seedlayer, form island film. It is concluded that WCr100-X (X = 0, 25, 50) seedlayers that have dispersed island film and higher melting point than the nnderlayer are effective to reduce the grain size and the media noise in CoCrPtB-CrMo media.

Original languageEnglish
Pages (from-to)1958-1960
Number of pages3
JournalIEEE Transactions on Magnetics
Volume38
Issue number5 I
DOIs
Publication statusPublished - 2002 Sep 1
Event2002 International Magnetics Conference (Intermag 2002) - Amsterdam, Netherlands
Duration: 2002 Apr 282002 May 2

Keywords

  • Auger electron spectroscope (AES)
  • Island or layer-like structure
  • Melting point
  • Reflection high-energy electron diffraction (RHEED)
  • Very thin Cr-based seedlayer

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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