Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n -metal-oxide-semiconductor field-effect transistors

Tae Hun Shim, Seong Je Kim, Gon Sub Lee, Kwan Su Kim, Won Ju Cho, Jea Gun Park

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We investigated the dependence of temperature and self-heating on electron mobility in ultrathin body fully depleted silicon-on-insulator n -metal-oxide-semiconductor field-effect transistors as a function of silicon thickness by analyzing their electron states and electrical characteristics. We found that as the temperature increases, electron mobility decreases regardless of the silicon thickness. We also found that there is a less decrease when the silicon thickness is less than 3 nm than when it is greater than 3 nm. This is because there is a greater electron occupancy in a twofold valley. We demonstrated that the quantum size-effect, i.e., the higher electron mobility in silicon with a thickness less than 3 nm caused by the size-effect, can be eliminated by self-heating.

Original languageEnglish
Article number094522
JournalJournal of Applied Physics
Volume103
Issue number9
DOIs
Publication statusPublished - 2008 May 26
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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