Dependence of SiO 2 /Si interface structure on low-temperature oxidation process

T. Hattori, K. Azuma, Y. Nakata, M. Shioji, T. Shiraishi, T. Yoshida, K. Takahashi, H. Nohira, Y. Takata, S. Shin, K. Kobayashi

    Research output: Contribution to journalConference articlepeer-review

    8 Citations (Scopus)

    Abstract

    By using the SPring-8 beam line, we have studied the dependence of the chemical structure and uniformity of three kinds of approximately 1nm-thick silicon oxide films formed by using atomic oxygen at 300°C on the oxidation process. Among the SiO 2 Si interfaces formed by several oxidation methods using atomic oxygen, the uniformity was strongly dependent on the oxidation process and the highest uniformity was obtained with the krypton-mixed oxygen plasma oxidation, while the abruptness of the compositional transition layer was weakly dependent on the oxidation process.

    Original languageEnglish
    Pages (from-to)197-201
    Number of pages5
    JournalApplied Surface Science
    Volume234
    Issue number1-4
    DOIs
    Publication statusPublished - 2004 Jul 15
    EventThe Ninth International Conference on the Formation of Semicon - Madrid, Spain
    Duration: 2003 Sep 152003 Sep 19

    Keywords

    • Electronic structure
    • Interface structure
    • Oxidation process
    • Photoelectron spectra
    • Uniformity

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Physics and Astronomy(all)
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films

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