Dependence of Magnetostriction of Sputtered Tb-Fe Films on Preparation Conditions

Yoshiaki Hayashi; T. Honda; K. I. Arai; Kazushi Ishiyama; Masahiro Yamaguchi

doi:10.1109/20.280877

Dependence of Magnetostriction of Sputtered Tb-Fe Films on Preparation Conditions

Yoshiaki Hayashi, T. Honda, K. I. Arai, Kazushi Ishiyama, Masahiro Yamaguchi

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

Amorphous Tb-Fe thin films prepared by sputtering method in the compositional range Tb_xFe_1-x(x=0-0.5) have been investigated in view of their potential for use in electromagnetic thin film actuators. We examined the magnetostriction and the coercive force for the Tb-Fe films for different sputtering conditions to obtain both soft magnetic properties and large magnetostriction in this system. As a result, we obtained Tb-Fe thin films having large magnetostrictions (180×10^-6at 1kOe) and low coercive force (60–70 Oe). These films were prepared under the conditions of the composition of 45-50at%Tb, Ar gas pressure of 4mTorr, rf input power of 200W and using water cooled substrates. A trial actuator using magnetostrictive thin films is also reported.

Original language	English
Pages (from-to)	3129-3131
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	29
Issue number	6
DOIs	https://doi.org/10.1109/20.280877
Publication status	Published - 1993 Jan 1

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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abstract = "Amorphous Tb-Fe thin films prepared by sputtering method in the compositional range TbxFe1-x(x=0-0.5) have been investigated in view of their potential for use in electromagnetic thin film actuators. We examined the magnetostriction and the coercive force for the Tb-Fe films for different sputtering conditions to obtain both soft magnetic properties and large magnetostriction in this system. As a result, we obtained Tb-Fe thin films having large magnetostrictions (180×10-6at 1kOe) and low coercive force (60–70 Oe). These films were prepared under the conditions of the composition of 45-50at%Tb, Ar gas pressure of 4mTorr, rf input power of 200W and using water cooled substrates. A trial actuator using magnetostrictive thin films is also reported.",

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AU - Honda, T.

AU - Arai, K. I.

AU - Ishiyama, Kazushi

AU - Yamaguchi, Masahiro

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