@inproceedings{389eb5d96be244dea6dca3b6256c1b24,
title = "Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method",
abstract = "Dependence of interface-state density (Dit) on three dimensional (3D) Si channels with a rectangular cross section of various width and shape was measured by charge-pumping method with gated PIN-diode configuration formed on silicon-on-insulator (SOI) wafer. The increase in Dit was observed with decreasing the width of the fin structure.",
author = "K. Nakajima and S. Sato and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",
note = "Funding Information: ACKNOWLEDGMENTS The authors thank the Junta de Extremadura and Fondo Social Europeo for the economic support through grant IPR98-C001.; 7th Symposium on ULSI Process Integration - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",
year = "2011",
doi = "10.1149/1.3633309",
language = "English",
isbn = "9781566779074",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "7",
pages = "293--298",
booktitle = "ULSI Process Integration 7",
edition = "7",
}