Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method

K. Nakajima; S. Sato; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3633309

Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method

K. Nakajima, S. Sato, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Dependence of interface-state density (D _it) on three dimensional (3D) Si channels with a rectangular cross section of various width and shape was measured by charge-pumping method with gated PIN-diode configuration formed on silicon-on-insulator (SOI) wafer. The increase in D _it was observed with decreasing the width of the fin structure.

Original language	English
Title of host publication	ULSI Process Integration 7
Pages	293-298
Number of pages	6
Edition	7
DOIs	https://doi.org/10.1149/1.3633309
Publication status	Published - 2011
Externally published	Yes
Event	7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States Duration: 2011 Oct 9 → 2011 Oct 14

Publication series

Name	ECS Transactions
Number	7
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	7th Symposium on ULSI Process Integration - 220th ECS Meeting
Country	United States
City	Boston, MA
Period	11/10/9 → 11/10/14

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.3633309

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Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method. / Nakajima, K.; Sato, S.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Natori, K.; Hattori, T.; Iwai, H.

ULSI Process Integration 7. 7. ed. 2011. p. 293-298 (ECS Transactions; Vol. 41, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakajima, K, Sato, S, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2011, Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method. in ULSI Process Integration 7. 7 edn, ECS Transactions, no. 7, vol. 41, pp. 293-298, 7th Symposium on ULSI Process Integration - 220th ECS Meeting, Boston, MA, United States, 11/10/9. https://doi.org/10.1149/1.3633309

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abstract = "Dependence of interface-state density (D it) on three dimensional (3D) Si channels with a rectangular cross section of various width and shape was measured by charge-pumping method with gated PIN-diode configuration formed on silicon-on-insulator (SOI) wafer. The increase in D it was observed with decreasing the width of the fin structure.",

author = "K. Nakajima and S. Sato and K. Kakushima and P. Ahmet and K. Tsutsui and A. Nishiyama and N. Sugii and K. Natori and T. Hattori and H. Iwai",

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AU - Ahmet, P.

AU - Tsutsui, K.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Natori, K.

AU - Hattori, T.

AU - Iwai, H.

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AB - Dependence of interface-state density (D it) on three dimensional (3D) Si channels with a rectangular cross section of various width and shape was measured by charge-pumping method with gated PIN-diode configuration formed on silicon-on-insulator (SOI) wafer. The increase in D it was observed with decreasing the width of the fin structure.

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Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method

Abstract

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