Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method

K. Nakajima, S. Sato, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Dependence of interface-state density (D it) on three dimensional (3D) Si channels with a rectangular cross section of various width and shape was measured by charge-pumping method with gated PIN-diode configuration formed on silicon-on-insulator (SOI) wafer. The increase in D it was observed with decreasing the width of the fin structure.

Original languageEnglish
Title of host publicationULSI Process Integration 7
Pages293-298
Number of pages6
Edition7
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number7
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other7th Symposium on ULSI Process Integration - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/911/10/14

ASJC Scopus subject areas

  • Engineering(all)

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