Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method

K. Nakajima; S. Sato; K. Kakushima; P. Ahmet; K. Tsutsui; A. Nishiyama; N. Sugii; K. Natori; T. Hattori; H. Iwai

doi:10.1149/1.3633309

Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method

K. Nakajima, S. Sato, K. Kakushima, P. Ahmet, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Dependence of interface-state density (D_it) on three dimensional (3D) Si channels with a rectangular cross section of various width and shape was measured by charge-pumping method with gated PIN-diode configuration formed on silicon-on-insulator (SOI) wafer. The increase in D_it was observed with decreasing the width of the fin structure.

Original language	English
Title of host publication	ULSI Process Integration 7
Publisher	Electrochemical Society Inc.
Pages	293-298
Number of pages	6
Edition	7
ISBN (Electronic)	9781607682615
ISBN (Print)	9781566779074
DOIs	https://doi.org/10.1149/1.3633309
Publication status	Published - 2011
Event	7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States Duration: 2011 Oct 9 → 2011 Oct 14

Publication series

Name	ECS Transactions
Number	7
Volume	41
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	7th Symposium on ULSI Process Integration - 220th ECS Meeting
Country/Territory	United States
City	Boston, MA
Period	11/10/9 → 11/10/14

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3633309

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Nakajima, K., Sato, S., Kakushima, K., Ahmet, P., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2011). Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method. In ULSI Process Integration 7 (7 ed., pp. 293-298). (ECS Transactions; Vol. 41, No. 7). Electrochemical Society Inc.. https://doi.org/10.1149/1.3633309

Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method. / Nakajima, K.; Sato, S.; Kakushima, K.; Ahmet, P.; Tsutsui, K.; Nishiyama, A.; Sugii, N.; Natori, K.; Hattori, T.; Iwai, H.

ULSI Process Integration 7. 7. ed. Electrochemical Society Inc., 2011. p. 293-298 (ECS Transactions; Vol. 41, No. 7).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nakajima, K, Sato, S, Kakushima, K, Ahmet, P, Tsutsui, K, Nishiyama, A, Sugii, N, Natori, K, Hattori, T & Iwai, H 2011, Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method. in ULSI Process Integration 7. 7 edn, ECS Transactions, no. 7, vol. 41, Electrochemical Society Inc., pp. 293-298, 7th Symposium on ULSI Process Integration - 220th ECS Meeting, Boston, MA, United States, 11/10/9. https://doi.org/10.1149/1.3633309

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abstract = "Dependence of interface-state density (Dit) on three dimensional (3D) Si channels with a rectangular cross section of various width and shape was measured by charge-pumping method with gated PIN-diode configuration formed on silicon-on-insulator (SOI) wafer. The increase in Dit was observed with decreasing the width of the fin structure.",

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note = "Funding Information: ACKNOWLEDGMENTS The authors thank the Junta de Extremadura and Fondo Social Europeo for the economic support through grant IPR98-C001.; 7th Symposium on ULSI Process Integration - 220th ECS Meeting ; Conference date: 09-10-2011 Through 14-10-2011",

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AU - Sugii, N.

AU - Natori, K.

AU - Hattori, T.

AU - Iwai, H.

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Dependence of interface-state density on three dimensional silicon structure measured by charge-pumping method

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