Dependence of hole mobility on channel surface of ultrathin-body silicon-on-insulator pMOSFETs

Kwan Su Kim; Sang Mo Koo; Won Ju Cho

doi:10.1007/s10832-007-9389-7

Dependence of hole mobility on channel surface of ultrathin-body silicon-on-insulator pMOSFETs

Kwan Su Kim, Sang Mo Koo, Won Ju Cho

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the characteristics of ultrathin-body (UTB) silicon-on-insulator (SOI) p-type metal-oxide-semiconductor field-effect transistors pMOSFETs with channel thickness less than 10 nm regime. At the same time, the dependence of electrical characteristics on the silicon surface orientations with (100) or (110) were also investigated. As a result, it is found that the electrical characteristics of (100)-surface UTB-SOI pMOSFETs were superior to those of (110)-surface. Moreover, the SOI thickness from 3 to 5 nm, the increase of effective hole mobility at the effective field of 0.3 MV/cm was observed for both (100) and (110) surfaces. The mobility enhancement ratio of (110) surface was larger than that of (100) surface.

Original language	English
Pages (from-to)	206-208
Number of pages	3
Journal	Journal of Electroceramics
Volume	23
Issue number	2-4
DOIs	https://doi.org/10.1007/s10832-007-9389-7
Publication status	Published - 2009 Oct 1
Externally published	Yes

Keywords

Hole mobility enhancement
SOI
Subband modulation
Ultrathin-body

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Mechanics of Materials
Electrical and Electronic Engineering
Materials Chemistry

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title = "Dependence of hole mobility on channel surface of ultrathin-body silicon-on-insulator pMOSFETs",

abstract = "We investigated the characteristics of ultrathin-body (UTB) silicon-on-insulator (SOI) p-type metal-oxide-semiconductor field-effect transistors pMOSFETs with channel thickness less than 10 nm regime. At the same time, the dependence of electrical characteristics on the silicon surface orientations with (100) or (110) were also investigated. As a result, it is found that the electrical characteristics of (100)-surface UTB-SOI pMOSFETs were superior to those of (110)-surface. Moreover, the SOI thickness from 3 to 5 nm, the increase of effective hole mobility at the effective field of 0.3 MV/cm was observed for both (100) and (110) surfaces. The mobility enhancement ratio of (110) surface was larger than that of (100) surface.",

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author = "Kim, {Kwan Su} and Koo, {Sang Mo} and Cho, {Won Ju}",

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AU - Kim, Kwan Su

AU - Koo, Sang Mo

AU - Cho, Won Ju

PY - 2009/10/1

Y1 - 2009/10/1

N2 - We investigated the characteristics of ultrathin-body (UTB) silicon-on-insulator (SOI) p-type metal-oxide-semiconductor field-effect transistors pMOSFETs with channel thickness less than 10 nm regime. At the same time, the dependence of electrical characteristics on the silicon surface orientations with (100) or (110) were also investigated. As a result, it is found that the electrical characteristics of (100)-surface UTB-SOI pMOSFETs were superior to those of (110)-surface. Moreover, the SOI thickness from 3 to 5 nm, the increase of effective hole mobility at the effective field of 0.3 MV/cm was observed for both (100) and (110) surfaces. The mobility enhancement ratio of (110) surface was larger than that of (100) surface.

AB - We investigated the characteristics of ultrathin-body (UTB) silicon-on-insulator (SOI) p-type metal-oxide-semiconductor field-effect transistors pMOSFETs with channel thickness less than 10 nm regime. At the same time, the dependence of electrical characteristics on the silicon surface orientations with (100) or (110) were also investigated. As a result, it is found that the electrical characteristics of (100)-surface UTB-SOI pMOSFETs were superior to those of (110)-surface. Moreover, the SOI thickness from 3 to 5 nm, the increase of effective hole mobility at the effective field of 0.3 MV/cm was observed for both (100) and (110) surfaces. The mobility enhancement ratio of (110) surface was larger than that of (100) surface.

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KW - Subband modulation

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