Abstract
According to the reduction of gate oxide thickness in Metal-Oxide-Semiconductor (MOS) devices, the gate oxide degradation caused by the stored charge during magnetized high-density plasma etching becomes a serious problem. Thegate oxide degradation and the breakdown are brought about due to the nonuniform plasma radiation by the unevenmagnetic field profile. Therefore, the flat equi-magnetic field profile suppresses the gate oxide degradation during electron cyclotron resonance (ECR) plasma etching.
Original language | English |
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Pages (from-to) | L1902-L1904 |
Journal | Japanese journal of applied physics |
Volume | 30 |
Issue number | 11A |
DOIs | |
Publication status | Published - 1991 Nov |
Externally published | Yes |
Keywords
- Charge-up
- ECR plasma
- Gate oxide breakdown
- Plasma uniformity
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)