Dependence of gate oxide breakdown frequency on ion current density distributions during electron cyclotronresonance plasma etching

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

According to the reduction of gate oxide thickness in Metal-Oxide-Semiconductor (MOS) devices, the gate oxide degradation caused by the stored charge during magnetized high-density plasma etching becomes a serious problem. Thegate oxide degradation and the breakdown are brought about due to the nonuniform plasma radiation by the unevenmagnetic field profile. Therefore, the flat equi-magnetic field profile suppresses the gate oxide degradation during electron cyclotron resonance (ECR) plasma etching.

Original languageEnglish
Pages (from-to)L1902-L1904
JournalJapanese journal of applied physics
Volume30
Issue number11A
DOIs
Publication statusPublished - 1991 Nov
Externally publishedYes

Keywords

  • Charge-up
  • ECR plasma
  • Gate oxide breakdown
  • Plasma uniformity

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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