Dependence of electron mobility on spacer thickness and electron density in modulation-doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions

K. H. Hsieh, H. Ohno, G. Wicks, L. F. Eastman

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

Modulation-doped Ga0.4.7In0.53As/Al0.48In0.52As heterojunctions were grown by molecular beam epitaxy. Electron mobilities were measured at room temperature and 77 K. as a function of undoped Al0.48In0.52As spacer layer thickness and sheet carrier concentration. Enhanced mobilities were as high as 10900 cm2V-1s-1 at room temperature and 55 500 cm2 V-1 s-1 at 77 K in these samples with sheet carrier concentrations at 1.33 × 1012 cm-2 (room temperature) and 1.26 × 1012cm-2(77K).

Original languageEnglish
Pages (from-to)160-162
Number of pages3
JournalElectronics Letters
Volume19
Issue number5
DOIs
Publication statusPublished - 1983 Mar 3
Externally publishedYes

Keywords

  • Electron mobility
  • Epitaxial growth
  • Semiconductor devices and materials

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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