Deoxidization of Cu oxide has been carried out in an extremely low oxygen partial pressure atmosphere for the first time. The oxygen was evacuated to 10-28 atm by using the newly developed oxygen reduction system (ORS). It was experimentally demonstrated that the surface oxide of Cu film was completely removed by exposure to such an environment at 200°C. The proposed deoxidization reaction can be used as a new Cu surface cleaning technique.
|Number of pages||5|
|Journal||Advanced Metallization Conference (AMC)|
|Publication status||Published - 2006 Mar 23|
|Event||22nd Annual Advanced Metallization Conference, AMC 2005 - Colorado, Springs, CO, United States|
Duration: 2005 Sep 27 → 2005 Sep 29
ASJC Scopus subject areas
- Chemical Engineering(all)