Deoxidization of CU Oxide under extremely low oxygen pressure ambient

Kazuhiko Endo, Naoki Shirakawa, Yoshiyuki Yoshida, Shin Ichi Ikeda, Tetsuya Mino, Eishi Gofuku, Eiichi Suzuki

Research output: Contribution to journalConference articlepeer-review

Abstract

Deoxidization of Cu oxide has been carried out in an extremely low oxygen partial pressure atmosphere for the first time. The oxygen was evacuated to 10-28 atm by using the newly developed oxygen reduction system (ORS). It was experimentally demonstrated that the surface oxide of Cu film was completely removed by exposure to such an environment at 200°C. The proposed deoxidization reaction can be used as a new Cu surface cleaning technique.

Original languageEnglish
Pages (from-to)563-567
Number of pages5
JournalAdvanced Metallization Conference (AMC)
Publication statusPublished - 2006 Mar 23
Externally publishedYes
Event22nd Annual Advanced Metallization Conference, AMC 2005 - Colorado, Springs, CO, United States
Duration: 2005 Sep 272005 Sep 29

ASJC Scopus subject areas

  • Chemical Engineering(all)

Fingerprint Dive into the research topics of 'Deoxidization of CU Oxide under extremely low oxygen pressure ambient'. Together they form a unique fingerprint.

Cite this