Deoxidization of Cu oxide under extremely low oxygen pressure ambient

Kazuhiko Endo, Naoki Shirakawa, Yoshiyuki Yoshida, Shin Ichi Ikeda, Tetsuya Mlno, Eishi Gofuku, Eiichi Suzuki

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Cu oxide has been deoxidized in an extremely low oxygen partial pressure atmosphere. The oxygen was evacuated to 10-28 atm using a newly developed oxygen reduction system (ORS). It was experimentally demonstrated that the surface oxide of Cu film was completely removed by exposure to such an environment at 200°C. The proposed deoxidization reaction can be used as a new Cu surface cleaning technique.

Original languageEnglish
Pages (from-to)L393-L395
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number12-16
DOIs
Publication statusPublished - 2006 May 17
Externally publishedYes

Keywords

  • Cleaning
  • Cu oxide
  • Deoxidization
  • Extremely low oxygen partial pressure
  • Solid electrolyte
  • Zirconia

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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  • Cite this

    Endo, K., Shirakawa, N., Yoshida, Y., Ikeda, S. I., Mlno, T., Gofuku, E., & Suzuki, E. (2006). Deoxidization of Cu oxide under extremely low oxygen pressure ambient. Japanese Journal of Applied Physics, Part 2: Letters, 45(12-16), L393-L395. https://doi.org/10.1143/JJAP.45.L393