Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density

J. Ivanco, T. Kubota, H. Kobayashi

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

The GaAs surface with the native oxide formed by wet etching has been gradually deoxidized via evaporation of a silicon overlayer. Both chemical and electronic properties of such structures have been examined by x-ray photoelectron spectroscopy (XPS) and "XPS under biases," respectively. The latter technique enables a direct assessment of the interface state density of insulatorsemiconductor interfaces. We have concluded that gap states incident to the native oxideGaAs interface have annihilated due to replacement of Ga-O bonds by Ga-Si and As-Si bonds.

Original languageEnglish
Article number073712
JournalJournal of Applied Physics
Volume97
Issue number7
DOIs
Publication statusPublished - 2005 Apr 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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