Density-dependent electronic structure of zinc-blende-type MnAs dots on GaAs(001) studied by in situ photoemission spectroscopy

J. Okabayashi, M. Mizuguchi, K. Ono, M. Oshima, A. Fujimori, H. Kuramochi, H. Akinaga

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23 Citations (Scopus)

Abstract

We report on the density dependence of the morphology and electronic structure of zinc-blende-type MnAs dots using in situ photoemission spectroscopy combined with molecular-beam epitaxy. Transmission electron microscopy images showed the zinc-blende-type crystalline structure of 10-nm diameter for each dot on sulfur-passivated GaAs(001) surface. The valence-band photoemission spectra of the MnAs dots were similar to those of the diluted magnetic semiconductor Ga1-xMnxAs. With increasing dot density, the characteristic spectra of the zinc-blende-type MnAs persist but a weak Fermi edge appears, suggesting a metallic behavior as a result of percolation between the dots or the appearance of hexagonal MnAs as a minority phase.

Original languageEnglish
Article number233305
Pages (from-to)1-4
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume70
Issue number23
DOIs
Publication statusPublished - 2004 Dec

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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