Densification of chemical vapor deposition silicon dioxide film using oxygen radical oxidation

Kazumasa Kawase, Akinobu Teramoto, Hiroshi Umeda, Tomoyuki Suwa, Yasushi Uehara, Takeo Hattori, Tadahiro Ohmi

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Silicon dioxide (SiO 2) films formed by chemical vapor deposition (CVD) were treated with oxygen radical oxidation using ArO 2 plasma excited by microwave. The mass density depth profiles, carrier trap densities, and current-voltage characteristics of the radical-oxidized CVD-SiO 2 films were investigated. The mass density depth profiles were estimated with x ray reflectivity measurement using synchrotron radiation of SPring-8. The carrier trap densities were estimated with x ray photoelectron spectroscopy time-dependent measurement. The mass densities of the radical-oxidized CVD-SiO 2 films were increased near the SiO 2 surface. The densities of the carrier trap centers in these films were decreased. The leakage currents of the metal-oxide-semiconductor capacitors fabricated by using these films were reduced. It is probable that the insulation properties of the CVD-SiO 2 film are improved by the increase in the mass density and the decrease in the carrier trap density caused by the restoration of the Si-O network with the radical oxidation.

Original languageEnglish
Article number034101
JournalJournal of Applied Physics
Volume111
Issue number3
DOIs
Publication statusPublished - 2012 Feb 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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