The functional split-gate type trigate flash memory cell transistors have successfully been fabricated for the first time, and their threshold voltage (V t) variations before and after nor-mode program/erase cycle have systematically been compared with the stack-gate ones. It was experimentally found that split-gate type cell transistors with the same control gate length (L CG) of 176 nm show much smaller V t distribution after erase compared to those of stack-gate ones. Moreover, the measured source-drain breakdown voltage (BV DS) is higher than 3.1 V even the L CG was down to 76 nm. This indicates that the developed split-gate type trigate flash memory is very effective for scaled nor-type flash memory with highly suppressed over-erase.
- Flash memory
- split gate
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering