Demonstration of spin valve effects in silicon nanowires

Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, Yoshichika Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We have successfully demonstrated a lateral spin valve device using a silicon nanowire for the nonmagnetic channel. Low-temperature transport measurements with in-plane magnetic field were performed in both local and nonlocal configurations. Hysteretic behavior was observed in the local magnetoresistance curves, with a maximum change of 0.18 at 2.4 K. The shape of the magnetoresistance curves indicates spin valve behavior with two switching fields. In the nonlocal voltage configuration, distinct dips were observed when the injector and detector contacts had antiparallel magnetization states.

Original languageEnglish
Article number07C508
JournalJournal of Applied Physics
Volume109
Issue number7
DOIs
Publication statusPublished - 2011 Apr 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Tarun, J., Huang, S., Fukuma, Y., Idzuchi, H., Otani, Y., Fukata, N., Ishibashi, K., & Oda, S. (2011). Demonstration of spin valve effects in silicon nanowires. Journal of Applied Physics, 109(7), [07C508]. https://doi.org/10.1063/1.3562904