Demonstration of spin valve effects in silicon nanowires

Jean Tarun; Shaoyun Huang; Yasuhiro Fukuma; Hiroshi Idzuchi; Yoshichika Otani; Naoki Fukata; Koji Ishibashi; Shunri Oda

doi:10.1063/1.3562904

Demonstration of spin valve effects in silicon nanowires

Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, Yoshichika Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have successfully demonstrated a lateral spin valve device using a silicon nanowire for the nonmagnetic channel. Low-temperature transport measurements with in-plane magnetic field were performed in both local and nonlocal configurations. Hysteretic behavior was observed in the local magnetoresistance curves, with a maximum change of 0.18 at 2.4 K. The shape of the magnetoresistance curves indicates spin valve behavior with two switching fields. In the nonlocal voltage configuration, distinct dips were observed when the injector and detector contacts had antiparallel magnetization states.

Original language	English
Article number	07C508
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3562904
Publication status	Published - 2011 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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AU - Tarun, Jean

AU - Huang, Shaoyun

AU - Fukuma, Yasuhiro

AU - Idzuchi, Hiroshi

AU - Otani, Yoshichika

AU - Fukata, Naoki

AU - Ishibashi, Koji

AU - Oda, Shunri

PY - 2011/4/1

Y1 - 2011/4/1

N2 - We have successfully demonstrated a lateral spin valve device using a silicon nanowire for the nonmagnetic channel. Low-temperature transport measurements with in-plane magnetic field were performed in both local and nonlocal configurations. Hysteretic behavior was observed in the local magnetoresistance curves, with a maximum change of 0.18 at 2.4 K. The shape of the magnetoresistance curves indicates spin valve behavior with two switching fields. In the nonlocal voltage configuration, distinct dips were observed when the injector and detector contacts had antiparallel magnetization states.

AB - We have successfully demonstrated a lateral spin valve device using a silicon nanowire for the nonmagnetic channel. Low-temperature transport measurements with in-plane magnetic field were performed in both local and nonlocal configurations. Hysteretic behavior was observed in the local magnetoresistance curves, with a maximum change of 0.18 at 2.4 K. The shape of the magnetoresistance curves indicates spin valve behavior with two switching fields. In the nonlocal voltage configuration, distinct dips were observed when the injector and detector contacts had antiparallel magnetization states.

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