Demonstration of spin valve effects in silicon nanowires

Jean Tarun; Shaoyun Huang; Yasuhiro Fukuma; Hiroshi Idzuchi; Yoshichika Otani; Naoki Fukata; Koji Ishibashi; Shunri Oda

doi:10.1063/1.3562904

Demonstration of spin valve effects in silicon nanowires

Jean Tarun, Shaoyun Huang, Yasuhiro Fukuma, Hiroshi Idzuchi, Yoshichika Otani, Naoki Fukata, Koji Ishibashi, Shunri Oda

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We have successfully demonstrated a lateral spin valve device using a silicon nanowire for the nonmagnetic channel. Low-temperature transport measurements with in-plane magnetic field were performed in both local and nonlocal configurations. Hysteretic behavior was observed in the local magnetoresistance curves, with a maximum change of 0.18 at 2.4 K. The shape of the magnetoresistance curves indicates spin valve behavior with two switching fields. In the nonlocal voltage configuration, distinct dips were observed when the injector and detector contacts had antiparallel magnetization states.

Original language	English
Article number	07C508
Journal	Journal of Applied Physics
Volume	109
Issue number	7
DOIs	https://doi.org/10.1063/1.3562904
Publication status	Published - 2011 Apr 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.3562904

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@article{6cccd255c9264c89be8bde1895e578b3,

title = "Demonstration of spin valve effects in silicon nanowires",

abstract = "We have successfully demonstrated a lateral spin valve device using a silicon nanowire for the nonmagnetic channel. Low-temperature transport measurements with in-plane magnetic field were performed in both local and nonlocal configurations. Hysteretic behavior was observed in the local magnetoresistance curves, with a maximum change of 0.18 at 2.4 K. The shape of the magnetoresistance curves indicates spin valve behavior with two switching fields. In the nonlocal voltage configuration, distinct dips were observed when the injector and detector contacts had antiparallel magnetization states.",

author = "Jean Tarun and Shaoyun Huang and Yasuhiro Fukuma and Hiroshi Idzuchi and Yoshichika Otani and Naoki Fukata and Koji Ishibashi and Shunri Oda",

year = "2011",

month = apr,

day = "1",

doi = "10.1063/1.3562904",

language = "English",

volume = "109",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "7",

}

TY - JOUR

T1 - Demonstration of spin valve effects in silicon nanowires

AU - Tarun, Jean

AU - Huang, Shaoyun

AU - Fukuma, Yasuhiro

AU - Idzuchi, Hiroshi

AU - Otani, Yoshichika

AU - Fukata, Naoki

AU - Ishibashi, Koji

AU - Oda, Shunri

PY - 2011/4/1

Y1 - 2011/4/1

N2 - We have successfully demonstrated a lateral spin valve device using a silicon nanowire for the nonmagnetic channel. Low-temperature transport measurements with in-plane magnetic field were performed in both local and nonlocal configurations. Hysteretic behavior was observed in the local magnetoresistance curves, with a maximum change of 0.18 at 2.4 K. The shape of the magnetoresistance curves indicates spin valve behavior with two switching fields. In the nonlocal voltage configuration, distinct dips were observed when the injector and detector contacts had antiparallel magnetization states.

AB - We have successfully demonstrated a lateral spin valve device using a silicon nanowire for the nonmagnetic channel. Low-temperature transport measurements with in-plane magnetic field were performed in both local and nonlocal configurations. Hysteretic behavior was observed in the local magnetoresistance curves, with a maximum change of 0.18 at 2.4 K. The shape of the magnetoresistance curves indicates spin valve behavior with two switching fields. In the nonlocal voltage configuration, distinct dips were observed when the injector and detector contacts had antiparallel magnetization states.

UR - http://www.scopus.com/inward/record.url?scp=79955419147&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79955419147&partnerID=8YFLogxK

U2 - 10.1063/1.3562904

DO - 10.1063/1.3562904

M3 - Article

AN - SCOPUS:79955419147

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

M1 - 07C508

ER -

Demonstration of spin valve effects in silicon nanowires

Abstract

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