Abstract
We have successfully demonstrated a lateral spin valve device using a silicon nanowire for the nonmagnetic channel. Low-temperature transport measurements with in-plane magnetic field were performed in both local and nonlocal configurations. Hysteretic behavior was observed in the local magnetoresistance curves, with a maximum change of 0.18 at 2.4 K. The shape of the magnetoresistance curves indicates spin valve behavior with two switching fields. In the nonlocal voltage configuration, distinct dips were observed when the injector and detector contacts had antiparallel magnetization states.
Original language | English |
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Article number | 07C508 |
Journal | Journal of Applied Physics |
Volume | 109 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2011 Apr 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)