Abstract
We report for the first time on the use of a Ni FUlly GErmano-SIlicide (FUGESI) as a metal gate in pFETs. Using HfSiON dielectrics and comparing to Ni FUSI devices, we demonstrate that the addition of Ge in poly-Si gate results in 1) Fermi-level unpinning with >200 mV increase in work function; 2) improved dielectrics integrity: such as decreased 1/f and Generation-Recombination noise, improved channel interface, reduced gate leakage, and superior NBTI characteristics. The above experimental observations are correlated to oxygen vacancies related defects in the HfSiON layer.
Original language | English |
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Title of host publication | IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest |
Pages | 638-641 |
Number of pages | 4 |
Publication status | Published - 2005 |
Event | IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 2005 Dec 5 → 2005 Dec 7 |
Publication series
Name | Technical Digest - International Electron Devices Meeting, IEDM |
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Volume | 2005 |
ISSN (Print) | 0163-1918 |
Other
Other | IEEE International Electron Devices Meeting, 2005 IEDM |
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Country | United States |
City | Washington, DC, MD |
Period | 05/12/5 → 05/12/7 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry