Demonstration of Ni fully germanoSilicide as a pFET gate electrode candidate on HfSiON

H. Y. Yu, R. Singanamalla, K. Opsomer, E. Augendre, E. Simoen, J. A. Kittl, S. Kubicek, S. Severi, X. P. Shi, S. Brus, C. Zhao, J. F. De Marneffe, S. Locorotondo, D. Shamiryan, M. Van Dal, A. Veloso, A. Lauwers, M. Niwa, K. Maex, K. D. MeyerP. Absil, M. Jurczak, S. Biesemans

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We report for the first time on the use of a Ni FUlly GErmano-SIlicide (FUGESI) as a metal gate in pFETs. Using HfSiON dielectrics and comparing to Ni FUSI devices, we demonstrate that the addition of Ge in poly-Si gate results in 1) Fermi-level unpinning with >200 mV increase in work function; 2) improved dielectrics integrity: such as decreased 1/f and Generation-Recombination noise, improved channel interface, reduced gate leakage, and superior NBTI characteristics. The above experimental observations are correlated to oxygen vacancies related defects in the HfSiON layer.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages638-641
Number of pages4
Publication statusPublished - 2005
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 2005 Dec 52005 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period05/12/505/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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