Demonstration of Ni fully germanoSilicide as a pFET gate electrode candidate on HfSiON

H. Y. Yu; R. Singanamalla; K. Opsomer; E. Augendre; E. Simoen; J. A. Kittl; S. Kubicek; S. Severi; X. P. Shi; S. Brus; C. Zhao; J. F. De Marneffe; S. Locorotondo; D. Shamiryan; M. Van Dal; A. Veloso; A. Lauwers; M. Niwa; K. Maex; K. D. Meyer; P. Absil; M. Jurczak; S. Biesemans

Demonstration of Ni fully germanoSilicide as a pFET gate electrode candidate on HfSiON

H. Y. Yu, R. Singanamalla, K. Opsomer, E. Augendre, E. Simoen, J. A. Kittl, S. Kubicek, S. Severi, X. P. Shi, S. Brus, C. Zhao, J. F. De Marneffe, S. Locorotondo, D. Shamiryan, M. Van Dal, A. Veloso, A. Lauwers, M. Niwa, K. Maex, K. D. MeyerP. Absil, M. Jurczak, S. Biesemans

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We report for the first time on the use of a Ni FUlly GErmano-SIlicide (FUGESI) as a metal gate in pFETs. Using HfSiON dielectrics and comparing to Ni FUSI devices, we demonstrate that the addition of Ge in poly-Si gate results in 1) Fermi-level unpinning with >200 mV increase in work function; 2) improved dielectrics integrity: such as decreased 1/f and Generation-Recombination noise, improved channel interface, reduced gate leakage, and superior NBTI characteristics. The above experimental observations are correlated to oxygen vacancies related defects in the HfSiON layer.

Original language	English
Title of host publication	IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages	638-641
Number of pages	4
Publication status	Published - 2005
Event	IEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States Duration: 2005 Dec 5 → 2005 Dec 7

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2005
ISSN (Print)	0163-1918

Other

Other	IEEE International Electron Devices Meeting, 2005 IEDM
Country/Territory	United States
City	Washington, DC, MD
Period	05/12/5 → 05/12/7

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Yu, H. Y., Singanamalla, R., Opsomer, K., Augendre, E., Simoen, E., Kittl, J. A., Kubicek, S., Severi, S., Shi, X. P., Brus, S., Zhao, C., De Marneffe, J. F., Locorotondo, S., Shamiryan, D., Van Dal, M., Veloso, A., Lauwers, A., Niwa, M., Maex, K., ... Biesemans, S. (2005). Demonstration of Ni fully germanoSilicide as a pFET gate electrode candidate on HfSiON. In IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest (pp. 638-641). [1609431] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Demonstration of Ni fully germanoSilicide as a pFET gate electrode candidate on HfSiON. / Yu, H. Y.; Singanamalla, R.; Opsomer, K.; Augendre, E.; Simoen, E.; Kittl, J. A.; Kubicek, S.; Severi, S.; Shi, X. P.; Brus, S.; Zhao, C.; De Marneffe, J. F.; Locorotondo, S.; Shamiryan, D.; Van Dal, M.; Veloso, A.; Lauwers, A.; Niwa, M.; Maex, K.; Meyer, K. D.; Absil, P.; Jurczak, M.; Biesemans, S.

IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. p. 638-641 1609431 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yu, HY, Singanamalla, R, Opsomer, K, Augendre, E, Simoen, E, Kittl, JA, Kubicek, S, Severi, S, Shi, XP, Brus, S, Zhao, C, De Marneffe, JF, Locorotondo, S, Shamiryan, D, Van Dal, M, Veloso, A, Lauwers, A, Niwa, M, Maex, K, Meyer, KD, Absil, P, Jurczak, M & Biesemans, S 2005, Demonstration of Ni fully germanoSilicide as a pFET gate electrode candidate on HfSiON. in IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest., 1609431, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2005, pp. 638-641, IEEE International Electron Devices Meeting, 2005 IEDM, Washington, DC, MD, United States, 05/12/5.

Yu, H. Y. ; Singanamalla, R. ; Opsomer, K. ; Augendre, E. ; Simoen, E. ; Kittl, J. A. ; Kubicek, S. ; Severi, S. ; Shi, X. P. ; Brus, S. ; Zhao, C. ; De Marneffe, J. F. ; Locorotondo, S. ; Shamiryan, D. ; Van Dal, M. ; Veloso, A. ; Lauwers, A. ; Niwa, M. ; Maex, K. ; Meyer, K. D. ; Absil, P. ; Jurczak, M. ; Biesemans, S. / Demonstration of Ni fully germanoSilicide as a pFET gate electrode candidate on HfSiON. IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest. 2005. pp. 638-641 (Technical Digest - International Electron Devices Meeting, IEDM).

@inproceedings{ef630fbec440407ca215c9e59af00ec8,

title = "Demonstration of Ni fully germanoSilicide as a pFET gate electrode candidate on HfSiON",

abstract = "We report for the first time on the use of a Ni FUlly GErmano-SIlicide (FUGESI) as a metal gate in pFETs. Using HfSiON dielectrics and comparing to Ni FUSI devices, we demonstrate that the addition of Ge in poly-Si gate results in 1) Fermi-level unpinning with >200 mV increase in work function; 2) improved dielectrics integrity: such as decreased 1/f and Generation-Recombination noise, improved channel interface, reduced gate leakage, and superior NBTI characteristics. The above experimental observations are correlated to oxygen vacancies related defects in the HfSiON layer.",

author = "Yu, {H. Y.} and R. Singanamalla and K. Opsomer and E. Augendre and E. Simoen and Kittl, {J. A.} and S. Kubicek and S. Severi and Shi, {X. P.} and S. Brus and C. Zhao and {De Marneffe}, {J. F.} and S. Locorotondo and D. Shamiryan and {Van Dal}, M. and A. Veloso and A. Lauwers and M. Niwa and K. Maex and Meyer, {K. D.} and P. Absil and M. Jurczak and S. Biesemans",

year = "2005",

language = "English",

isbn = "078039268X",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "638--641",

booktitle = "IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest",

}

TY - GEN

T1 - Demonstration of Ni fully germanoSilicide as a pFET gate electrode candidate on HfSiON

AU - Yu, H. Y.

AU - Singanamalla, R.

AU - Opsomer, K.

AU - Augendre, E.

AU - Simoen, E.

AU - Kittl, J. A.

AU - Kubicek, S.

AU - Severi, S.

AU - Shi, X. P.

AU - Brus, S.

AU - Zhao, C.

AU - De Marneffe, J. F.

AU - Locorotondo, S.

AU - Shamiryan, D.

AU - Van Dal, M.

AU - Veloso, A.

AU - Lauwers, A.

AU - Niwa, M.

AU - Maex, K.

AU - Meyer, K. D.

AU - Absil, P.

AU - Jurczak, M.

AU - Biesemans, S.

PY - 2005

Y1 - 2005

N2 - We report for the first time on the use of a Ni FUlly GErmano-SIlicide (FUGESI) as a metal gate in pFETs. Using HfSiON dielectrics and comparing to Ni FUSI devices, we demonstrate that the addition of Ge in poly-Si gate results in 1) Fermi-level unpinning with >200 mV increase in work function; 2) improved dielectrics integrity: such as decreased 1/f and Generation-Recombination noise, improved channel interface, reduced gate leakage, and superior NBTI characteristics. The above experimental observations are correlated to oxygen vacancies related defects in the HfSiON layer.

AB - We report for the first time on the use of a Ni FUlly GErmano-SIlicide (FUGESI) as a metal gate in pFETs. Using HfSiON dielectrics and comparing to Ni FUSI devices, we demonstrate that the addition of Ge in poly-Si gate results in 1) Fermi-level unpinning with >200 mV increase in work function; 2) improved dielectrics integrity: such as decreased 1/f and Generation-Recombination noise, improved channel interface, reduced gate leakage, and superior NBTI characteristics. The above experimental observations are correlated to oxygen vacancies related defects in the HfSiON layer.

UR - http://www.scopus.com/inward/record.url?scp=33847725830&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847725830&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847725830

SN - 078039268X

SN - 9780780392687

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 638

EP - 641

BT - IEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest

T2 - IEEE International Electron Devices Meeting, 2005 IEDM

Y2 - 5 December 2005 through 7 December 2005

ER -

Demonstration of Ni fully germanoSilicide as a pFET gate electrode candidate on HfSiON

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