TY - JOUR
T1 - Demonstration of GaN/LiNbO3 Hybrid Wafer Using Room-Temperature Surface Activated Bonding
AU - Takigawa, Ryo
AU - Matsumae, Takashi
AU - Yamamoto, Michitaka
AU - Higurashi, Eiji
AU - Asano, Tanemasa
AU - Kanaya, Haruichi
N1 - Publisher Copyright:
© 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.
PY - 2020/1/5
Y1 - 2020/1/5
N2 - In this study, a GaN/LiNbO3 hybrid wafer was demonstrated using roomerature bonding based on a surface activated bonding (SAB) method. The SAB using Fe-containing Ar ion beam bombardment achieved a strong bond between GaN and LiNbO3 wafers. The bonded wafer made using the modified SAB method was successfully cut into 1 1 mm2 dies using a dicing saw without interfacial debonding, and the measured tensile strength was estimated to be greater than approximately 26 MPa. These results show the presence of a strong bond that may be sufficient for device applications. In addition, TEM observation clearly indicated that the Fe-containing nanolayer deposited during ion beam bombardment appears to work well as an adhesive and form a strong bond between the negative surface of LiNbO3 and Ga-face of GaN. These results show the potential of this roomerature bonding method to achieve a future GaN/LiNbO3 hybrid platform that can fully exploit the unique properties of each material.
AB - In this study, a GaN/LiNbO3 hybrid wafer was demonstrated using roomerature bonding based on a surface activated bonding (SAB) method. The SAB using Fe-containing Ar ion beam bombardment achieved a strong bond between GaN and LiNbO3 wafers. The bonded wafer made using the modified SAB method was successfully cut into 1 1 mm2 dies using a dicing saw without interfacial debonding, and the measured tensile strength was estimated to be greater than approximately 26 MPa. These results show the presence of a strong bond that may be sufficient for device applications. In addition, TEM observation clearly indicated that the Fe-containing nanolayer deposited during ion beam bombardment appears to work well as an adhesive and form a strong bond between the negative surface of LiNbO3 and Ga-face of GaN. These results show the potential of this roomerature bonding method to achieve a future GaN/LiNbO3 hybrid platform that can fully exploit the unique properties of each material.
UR - http://www.scopus.com/inward/record.url?scp=85085244411&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85085244411&partnerID=8YFLogxK
U2 - 10.1149/2162-8777/ab8369
DO - 10.1149/2162-8777/ab8369
M3 - Article
AN - SCOPUS:85085244411
SN - 2162-8769
VL - 9
JO - ECS Journal of Solid State Science and Technology
JF - ECS Journal of Solid State Science and Technology
IS - 4
M1 - 045005
ER -