Demonstration of dopant profiling in ultrathin channels of vertical-type double-gate metal-oxide-semiconductor field-effect-transistor by scanning nonlinear Dielectric microscopy

Meishoku Masahara, Shinichi Hosokawa, Takashi Matsukawa, Kazuhiko Endo, Yuichi Naitou, Hisao Tanoue, Eiichi Suzuki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrate dopant profiling in ultrathin channels (UTCs) (Tc = 18-58nm) of vertical-type double-gate metal-oxide-semiconductor field-effect-transistors (DG MOSFET) by scanning nonlinear dielectric microscopy (SNDM). The vertical UTCs were fabricated by orientation-dependent-wet etching. Using ion implantation technology and subsequent furnace annealing, n +-p junctions, which correspond to the source/drain of the vertical-type DG MOSFET, were formed in the upper part of the UTC. To improve the accuracy of the vertical dopant profile in the UTC, the cross-section of the UTC was magnified by beveling with a small angle by chemical mechanical polishing. Using such a beveled sample, the dopant depth profile in the vertical UTC has been measured by SNDM with nanometer-scale resolution. On the basis of the measurements of the dopant profile, an effective channel length for the vertical DG MOSFET has also been estimated quantitatively

Original languageEnglish
Pages (from-to)2400-2404
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number4 B
DOIs
Publication statusPublished - 2005 Apr 1
Externally publishedYes

Keywords

  • Dopant profile
  • Effective channel length
  • Ion implantation
  • P-n junction
  • Scanning nonlinear dielectric microscopy
  • Ultrathin channel
  • Vertical-type DG MOSFET

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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