Abstract
We demonstrate dopant profiling in ultrathin channels (UTCs) (Tc = 18-58nm) of vertical-type double-gate metal-oxide-semiconductor field-effect-transistors (DG MOSFET) by scanning nonlinear dielectric microscopy (SNDM). The vertical UTCs were fabricated by orientation-dependent-wet etching. Using ion implantation technology and subsequent furnace annealing, n +-p junctions, which correspond to the source/drain of the vertical-type DG MOSFET, were formed in the upper part of the UTC. To improve the accuracy of the vertical dopant profile in the UTC, the cross-section of the UTC was magnified by beveling with a small angle by chemical mechanical polishing. Using such a beveled sample, the dopant depth profile in the vertical UTC has been measured by SNDM with nanometer-scale resolution. On the basis of the measurements of the dopant profile, an effective channel length for the vertical DG MOSFET has also been estimated quantitatively
Original language | English |
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Pages (from-to) | 2400-2404 |
Number of pages | 5 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 44 |
Issue number | 4 B |
DOIs | |
Publication status | Published - 2005 Apr |
Externally published | Yes |
Keywords
- Dopant profile
- Effective channel length
- Ion implantation
- P-n junction
- Scanning nonlinear dielectric microscopy
- Ultrathin channel
- Vertical-type DG MOSFET
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)