Demonstration and device design consideration of Fth- controllable independent double-gate MOSFET (4-Terminal XMOS)

M. Masahara, Y. X. Liu, K. Sakamoto, K. Endo, T. Matsukawa, K. Ishii, T. Sekigawa, H. Koike, E. Suzuki

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

The properties of 4-terminal double-gate MOSFETs (4-terminal XMOS) are experimentally revealed and their Vth controllability is thoroughly investigated by the comprehensible device modeling. Based on the analysis and simulated predictions for the 4T-XMOS transistors, the device design guideline for the 4T-XMOS transistors is proposed taking into account the device structure, bias condition and workfunction for the double gates, and short-channel effects.

Original languageEnglish
Pages261-272
Number of pages12
Publication statusPublished - 2005 Dec 1
Externally publishedYes
Event207th ECS Meeting - Quebec, Canada
Duration: 2005 May 162005 May 20

Other

Other207th ECS Meeting
CountryCanada
CityQuebec
Period05/5/1605/5/20

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Demonstration and device design consideration of F<sup>th</sup>- controllable independent double-gate MOSFET (4-Terminal XMOS)'. Together they form a unique fingerprint.

Cite this