The properties of 4-terminal double-gate MOSFETs (4-terminal XMOS) are experimentally revealed and their Vth controllability is thoroughly investigated by the comprehensible device modeling. Based on the analysis and simulated predictions for the 4T-XMOS transistors, the device design guideline for the 4T-XMOS transistors is proposed taking into account the device structure, bias condition and workfunction for the double gates, and short-channel effects.
|Number of pages||12|
|Publication status||Published - 2005 Dec 1|
|Event||207th ECS Meeting - Quebec, Canada|
Duration: 2005 May 16 → 2005 May 20
|Other||207th ECS Meeting|
|Period||05/5/16 → 05/5/20|
ASJC Scopus subject areas