Demonstrating individual leakage path from random telegraph signal of stress induced leakage current

A. Teramoto, T. Inatsuka, T. Obara, N. Akagawa, R. Kuroda, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Time-dependent characteristics of stress induced leakage current (SILC) for the 5.7 and 7.7 nm oxides were evaluated to detect the random telegraph signal (RTS) of gate leakage current. The leakage current from the RTS of IG was extracted. Each current value extracted from RTS of SILC indicates the absolute current of individual localized leakage spot. The results indicate that the absolute value at individual leakage spot can be analyzed by this method, and this evaluation method is useful for the development of process and design technologies for highly reliable MOS devices.

Original languageEnglish
Title of host publication2014 IEEE International Reliability Physics Symposium, IRPS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
PagesGD.1.1-GD.1.5
ISBN (Print)9781479933167
DOIs
Publication statusPublished - 2014
Event52nd IEEE International Reliability Physics Symposium, IRPS 2014 - Waikoloa, HI, United States
Duration: 2014 Jun 12014 Jun 5

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other52nd IEEE International Reliability Physics Symposium, IRPS 2014
CountryUnited States
CityWaikoloa, HI
Period14/6/114/6/5

Keywords

  • electric stress
  • localized path
  • random telegraph signal
  • stress induced leakage current
  • tunnel oxide

ASJC Scopus subject areas

  • Engineering(all)

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