Demonstrating distribution of SILC values at individual leakage spots

Takuya Inatsuka, Rihito Kuroda, Akinobu Teramoto, Yuki Kumagai, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Stress induced leakage current (SILC) in the order of 10-17 to 10-13 A were statistically evaluated by using an advanced test circuit. In this paper, the distribution of SILC was evaluated by changing measurement electric fields, electric stress intensities, device area, and oxide thickness. The distribution of SILC is determined by the current values at individual leakage spots when the device area is sufficiently small. When the electric stress intensity and the measurement field are small, the distribution of logarithm of SILC follows the Gumbel distribution because the maximum current values of the leakage spots determine the gate leakage current in small area MOSFETs. We also evaluated the time-dependent characteristics of SILC in small area MOSFETs. The random telegraph signals of gate leakage current were observed which also indicates the current values of individual leakage spots.

Original languageEnglish
Title of host publication2013 IEEE International Reliability Physics Symposium, IRPS 2013
PagesGD.5.1-GD.5.6
DOIs
Publication statusPublished - 2013 Aug 7
Event2013 IEEE International Reliability Physics Symposium, IRPS 2013 - Monterey, CA, United States
Duration: 2013 Apr 142013 Apr 18

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other2013 IEEE International Reliability Physics Symposium, IRPS 2013
CountryUnited States
CityMonterey, CA
Period13/4/1413/4/18

Keywords

  • Gumbel distribution
  • electric stress
  • random telegraph signal
  • stress induced leakage current

ASJC Scopus subject areas

  • Engineering(all)

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