Demonstrating 30-nm spatial resolution of three-multilayer-mirror objective for extreme ultraviolet microscopy: Imaging test by observing lithography mask

Mitsunori Toyoda, Kenjiro Yamasoe, Akifumi Tokimasa, Kentaro Uchida, Tetsuo Harada, Tsuneo Terasawa, Tsuyoshi Amano, Takeo Watanabe, Mihiro Yanagihara, Hiroo Kinoshita

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Abstract

To confirm the high spatial resolution expected in extreme ultraviolet (EUV) microscopy, fine grating patterns with a half-pitch of less than 100nm on a lithography mask were imaged using a full-field microscope based on a multilayer-mirror objective. When the tilted illumination technique is applied to this novel imaging system, a spatial resolution better than 20nm can be expected at a wavelength of 13.5 nm. We demonstrated high resolution via EUV reflection images of test patterns with a half-pitch between 30 and 80 nm.

Original languageEnglish
Article number102502
JournalApplied Physics Express
Volume7
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Toyoda, M., Yamasoe, K., Tokimasa, A., Uchida, K., Harada, T., Terasawa, T., Amano, T., Watanabe, T., Yanagihara, M., & Kinoshita, H. (2014). Demonstrating 30-nm spatial resolution of three-multilayer-mirror objective for extreme ultraviolet microscopy: Imaging test by observing lithography mask. Applied Physics Express, 7(10), [102502]. https://doi.org/10.7567/APEX.7.102502