Delta-doped SrTiO3 top-gated field effect transistor

Hisashi Inoue, Hyeok Yoon, Tyler A. Merz, Adrian G. Swartz, Seung Sae Hong, Yasuyuki Hikita, Harold Y. Hwang

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Oxide heterostructures are an attractive platform for incorporation in field-effect transistors (FETs) due to their diverse physical properties which can be tuned by electrostatic gating. We report a top-gated FET based on a SrTiO3 delta-doped structure, which operates down to cryogenic temperatures. The device shows excellent DC characteristics with an on/off ratio greater than 104 and field effect mobility estimated to be 2125 cm2/V s at 2 K. The high field effect mobility was consistent with the Hall mobility and is attributed to the formation of a two-dimensional electron system in the delta-doped layer: two-dimensional gate-tunable Shubnikov-de Haas oscillations confirm this. The achievement of an electron density of 3 × 1012 cm-2 in a gate-tunable geometry allows for the exploration of the interplay between magnetic, ferroelectric, and superconducting properties of SrTiO3 in the quantum limit.

Original languageEnglish
Article number231605
JournalApplied Physics Letters
Volume114
Issue number23
DOIs
Publication statusPublished - 2019 Jun 10

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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