Delta-doped epitaxial La: SrTiO3 field-effect transistor

K. Nishio, M. Matvejeff, R. Takahashi, M. Lippmaa, M. Sumiya, H. Yoshikawa, K. Kobayashi, Y. Yamashita

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We show that by delta doping a deep depletion layer at a SrTiO 3/CaHfO3 interface with La, it is possible to achieve a separation of physical dopants from the current transport layer in SrTiO 3. This allows us to construct an epitaxial top-gate field-effect transistor that can switch a channel with a physical dopant density of ∼ 1014cm-2 between insulating and metallic states with a finite threshold shift and without carrier mobility degradation at low temperature.

Original languageEnglish
Article number242113
JournalApplied Physics Letters
Issue number24
Publication statusPublished - 2011 Jun 13
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Delta-doped epitaxial La: SrTiO3 field-effect transistor'. Together they form a unique fingerprint.

Cite this