Delta-doped epitaxial La: SrTiO3 field-effect transistor

K. Nishio, M. Matvejeff, R. Takahashi, M. Lippmaa, M. Sumiya, H. Yoshikawa, K. Kobayashi, Y. Yamashita

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    6 Citations (Scopus)

    Abstract

    We show that by delta doping a deep depletion layer at a SrTiO 3/CaHfO3 interface with La, it is possible to achieve a separation of physical dopants from the current transport layer in SrTiO 3. This allows us to construct an epitaxial top-gate field-effect transistor that can switch a channel with a physical dopant density of ∼ 1014cm-2 between insulating and metallic states with a finite threshold shift and without carrier mobility degradation at low temperature.

    Original languageEnglish
    Article number242113
    JournalApplied Physics Letters
    Volume98
    Issue number24
    DOIs
    Publication statusPublished - 2011 Jun 13

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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