Delocalization of the f electron in CexLa1-xRu 2Si2 - The de Haas-van Alphen effect measurement

Y. Matsumoto, N. Kimura, T. Komatsubara, H. Aoki, N. Kurita, T. Terashima, S. Uji

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Abstract

We report the first observation of the continuous Fermi surface (FS) variation from La compound (LaRu2Si2) with no f electron to Ce compound (CeRu2Si2) with itinerant f electron via the de Haas-van Alphen (dHvA) effect. The dHvA frequency smoothly varies with Ce concentration and there is no discontinuous change with Ce concentration. It is found that the effective mass and signal amplitude with Ce concentration depends strongly on the Fermi surface sheet, and the effective mass is enhanced toward xc (= 0.91) and the signal amplitude reduces around xc or somewhere between xc and x ∼ 0.8.

Original languageEnglish
Article number012042
JournalJournal of Physics: Conference Series
Volume391
Issue number1
DOIs
Publication statusPublished - 2012
EventInternational Conference on Strongly Correlated Electron Systems, SCES 2011 - Cambridge, United Kingdom
Duration: 2011 Aug 292011 Sep 3

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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