Delocalization of the f electron in CexLa1-xRu 2Si2

Yuji Matsumoto, Noriaki Kimura, Hayuyoshi Aoki, Motoi Kimata, Taichi Terashima, Shinya Uji, Tetsuo Okane, Hiroshi Yamagami

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We have preformed the de Haas-van Alphen effect measurements in Ce xLa1-xRu2Si2 with magnetic fields in the (001) plane. All the oscillations corresponding to those in LaRu2Si2 can be observed in low Ce concentration samples and the evolution of the Fermi surface properties with x is found to depend strongly on the Fermi surface sheet. We show that the evolution can be attributed to anisotropic hybridization of the f electron with conduction electrons and resultant delocalization of the f electron.

Original languageEnglish
Article number083706
Journaljournal of the physical society of japan
Issue number8
Publication statusPublished - 2010 Aug 1


  • CeLaRuSi
  • Delocalize
  • Dhva effect
  • Kondo effect
  • Strong correlation
  • f electron

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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