Degradation of the characteristics of p + poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing

M. K. Mazumder, Akinobu Teramoto, K. Kobayashi, M. Sekine, S. Kawazu, H. Koyama

Research output: Contribution to conferencePaperpeer-review

2 Citations (Scopus)

Abstract

Nitridation of oxide causes to accumulate nitrogen at SiO 2 /Si interface and prevents the diffusion of boron to the Si substrate surface. This paper shows that in NO annealed oxide, N 2 post annealing causes degradation such as increasing leakage current and charge trapping. Also, it is found that for a constant current stress the time-to-breakdown in N 2 post annealed samples is one order of magnitude smaller than that of samples without N 2 post annealing. These increases of leakage current and charge trapping are found to be due to the penetration of boron into the oxide during subsequent high temperature post N 2 annealing.

Original languageEnglish
Pages142-143
Number of pages2
Publication statusPublished - 1997 Dec 1
Externally publishedYes
EventProceedings of the 1997 IEEE International Integrated Reliability Workshop - Tahoe, CA, USA
Duration: 1997 Oct 131997 Oct 16

Other

OtherProceedings of the 1997 IEEE International Integrated Reliability Workshop
CityTahoe, CA, USA
Period97/10/1397/10/16

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Fingerprint

Dive into the research topics of 'Degradation of the characteristics of p <sup>+</sup> poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing'. Together they form a unique fingerprint.

Cite this