Degradation of the characteristics of p+ poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing

M. K. Mazumder; A. Teramoto; K. Kobayashi; M. Sekine; S. Kawazu; H. Koyama

Degradation of the characteristics of p⁺ poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing

M. K. Mazumder, A. Teramoto, K. Kobayashi, M. Sekine, S. Kawazu, H. Koyama

Research output: Contribution to conference › Paper › peer-review

Abstract

Nitridation of oxide causes to accumulate nitrogen at SiO₂/Si interface and prevents the diffusion of boron to the Si substrate surface. This paper shows that in NO annealed oxide, N₂ post annealing causes degradation such as increasing leakage current and charge trapping. Also, it is found that for a constant current stress the time-to-breakdown in N₂ post annealed samples is one order of magnitude smaller than that of samples without N₂ post annealing. These increases of leakage current and charge trapping are found to be due to the penetration of boron into the oxide during subsequent high temperature post N₂ annealing.

Original language	English
Pages	142-143
Number of pages	2
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 IEEE International Integrated Reliability Workshop - Tahoe, CA, USA Duration: 1997 Oct 13 → 1997 Oct 16

Other

Other	Proceedings of the 1997 IEEE International Integrated Reliability Workshop
City	Tahoe, CA, USA
Period	97/10/13 → 97/10/16

ASJC Scopus subject areas

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

Cite this

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title = "Degradation of the characteristics of p+ poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing",

abstract = "Nitridation of oxide causes to accumulate nitrogen at SiO2/Si interface and prevents the diffusion of boron to the Si substrate surface. This paper shows that in NO annealed oxide, N2 post annealing causes degradation such as increasing leakage current and charge trapping. Also, it is found that for a constant current stress the time-to-breakdown in N2 post annealed samples is one order of magnitude smaller than that of samples without N2 post annealing. These increases of leakage current and charge trapping are found to be due to the penetration of boron into the oxide during subsequent high temperature post N2 annealing.",

author = "Mazumder, {M. K.} and A. Teramoto and K. Kobayashi and M. Sekine and S. Kawazu and H. Koyama",

year = "1997",

language = "English",

pages = "142--143",

note = "Proceedings of the 1997 IEEE International Integrated Reliability Workshop ; Conference date: 13-10-1997 Through 16-10-1997",

}

TY - CONF

T1 - Degradation of the characteristics of p+ poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing

AU - Mazumder, M. K.

AU - Teramoto, A.

AU - Kobayashi, K.

AU - Sekine, M.

AU - Kawazu, S.

AU - Koyama, H.

PY - 1997

Y1 - 1997

N2 - Nitridation of oxide causes to accumulate nitrogen at SiO2/Si interface and prevents the diffusion of boron to the Si substrate surface. This paper shows that in NO annealed oxide, N2 post annealing causes degradation such as increasing leakage current and charge trapping. Also, it is found that for a constant current stress the time-to-breakdown in N2 post annealed samples is one order of magnitude smaller than that of samples without N2 post annealing. These increases of leakage current and charge trapping are found to be due to the penetration of boron into the oxide during subsequent high temperature post N2 annealing.

AB - Nitridation of oxide causes to accumulate nitrogen at SiO2/Si interface and prevents the diffusion of boron to the Si substrate surface. This paper shows that in NO annealed oxide, N2 post annealing causes degradation such as increasing leakage current and charge trapping. Also, it is found that for a constant current stress the time-to-breakdown in N2 post annealed samples is one order of magnitude smaller than that of samples without N2 post annealing. These increases of leakage current and charge trapping are found to be due to the penetration of boron into the oxide during subsequent high temperature post N2 annealing.

UR - http://www.scopus.com/inward/record.url?scp=0031380178&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031380178&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031380178

SP - 142

EP - 143

T2 - Proceedings of the 1997 IEEE International Integrated Reliability Workshop

Y2 - 13 October 1997 through 16 October 1997

ER -

Degradation of the characteristics of p⁺ poly MOS capacitors with NO nitrided gate oxide due to post nitrogen annealing

Abstract

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ASJC Scopus subject areas

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