Degradation of Se-doped GaAs0.6P0.4 Light-emitting diodes

Tadashige Sato, Megumi Imai

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The rapid degradation of Se-doped GaAs0.6P0.4 light-emitting diodes is of prime importance in reliability studies of optical devices using III-V compound semiconductors. Marked changes are observed at the junction of Se-doped GaAs0.6P0.4 light-emitting diodes, because they degrade rapidly, in contrast to Te-doped GaAs0.6P0.4 light-emitting diodes, which degrade gradually. Here, this rapid degradation is investigated using aging tests under various conditions by a capacitance-voltage method and deep-level transient spectroscopy. We discuss the differences in the degradation mechanisms for the two diodes and propose a model for the rapid degradation.

Original languageEnglish
Pages (from-to)490-495
Number of pages6
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number2 A
DOIs
Publication statusPublished - 2002 Feb

Keywords

  • Degradation
  • Donor
  • Electron trap
  • GaAsP
  • Light-emitting diode

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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