Degradation of reliability of high-k gate dielectrics caused by point defects and residual stress

Hideo Miura; Ken Suzuki; Toru Ikoma; Seiji Samukawa; Hideki Yoshikawa; Shigenori Ueda; Yoshiyuki Yamashita; Keisuke Kobayashi

doi:10.1109/RELPHY.2008.4559002

Degradation of reliability of high-k gate dielectrics caused by point defects and residual stress

Hideo Miura, Ken Suzuki, Toru Ikoma, Seiji Samukawa, Hideki Yoshikawa, Shigenori Ueda, Yoshiyuki Yamashita, Keisuke Kobayashi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this study, the degradation mechanism of dielectric properties of hafnium dioxide thin films was investigated by using quantum chemical molecular dynamics. Effects of point defects such as oxygen vacancies and carbon interstitials and residual stress in the films on their local band gap were analyzed quantitatively. Drastic decrease of the local band gap from about 5.7 eV to about 1.0 eV was caused by the formation of a defect-induced site in the band gap. Though this defect-induced site was recovered by additional oxidation, the remaining interstitial oxygen deteriorated the quality of the interface with tungsten electrode by forming new oxide between them. The estimated changes of the band gap and the interface structure were confirmed by experiments using synchrotron-radiation photoemission spectroscopy.

Original language	English
Title of host publication	46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages	713-714
Number of pages	2
DOIs	https://doi.org/10.1109/RELPHY.2008.4559002
Publication status	Published - 2008
Event	46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States Duration: 2008 Apr 27 → 2008 May 1

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
ISSN (Print)	1541-7026

Other

Other	46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
Country	United States
City	Phoenix, AZ
Period	08/4/27 → 08/5/1

Keywords

Band gap
Hafnium oxide
High-k gate dielectrics
Point defects
Quantum chemical molecular dynamics
Residual stress
Synchrotron-radiation photoemission spectroscopy

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1109/RELPHY.2008.4559002

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Cite this

Miura, H., Suzuki, K., Ikoma, T., Samukawa, S., Yoshikawa, H., Ueda, S., Yamashita, Y., & Kobayashi, K. (2008). Degradation of reliability of high-k gate dielectrics caused by point defects and residual stress. In 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS (pp. 713-714). [4559002] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2008.4559002

Degradation of reliability of high-k gate dielectrics caused by point defects and residual stress. / Miura, Hideo ; Suzuki, Ken; Ikoma, Toru; Samukawa, Seiji; Yoshikawa, Hideki; Ueda, Shigenori; Yamashita, Yoshiyuki; Kobayashi, Keisuke.

46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS. 2008. p. 713-714 4559002 (IEEE International Reliability Physics Symposium Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Miura, H , Suzuki, K, Ikoma, T, Samukawa, S, Yoshikawa, H, Ueda, S, Yamashita, Y & Kobayashi, K 2008, Degradation of reliability of high-k gate dielectrics caused by point defects and residual stress. in 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS., 4559002, IEEE International Reliability Physics Symposium Proceedings, pp. 713-714, 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS, Phoenix, AZ, United States, 08/4/27. https://doi.org/10.1109/RELPHY.2008.4559002

Miura H , Suzuki K, Ikoma T, Samukawa S, Yoshikawa H, Ueda S et al. Degradation of reliability of high-k gate dielectrics caused by point defects and residual stress. In 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS. 2008. p. 713-714. 4559002. (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2008.4559002

Miura, Hideo ; Suzuki, Ken ; Ikoma, Toru ; Samukawa, Seiji ; Yoshikawa, Hideki ; Ueda, Shigenori ; Yamashita, Yoshiyuki ; Kobayashi, Keisuke. / Degradation of reliability of high-k gate dielectrics caused by point defects and residual stress. 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS. 2008. pp. 713-714 (IEEE International Reliability Physics Symposium Proceedings).

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abstract = "In this study, the degradation mechanism of dielectric properties of hafnium dioxide thin films was investigated by using quantum chemical molecular dynamics. Effects of point defects such as oxygen vacancies and carbon interstitials and residual stress in the films on their local band gap were analyzed quantitatively. Drastic decrease of the local band gap from about 5.7 eV to about 1.0 eV was caused by the formation of a defect-induced site in the band gap. Though this defect-induced site was recovered by additional oxidation, the remaining interstitial oxygen deteriorated the quality of the interface with tungsten electrode by forming new oxide between them. The estimated changes of the band gap and the interface structure were confirmed by experiments using synchrotron-radiation photoemission spectroscopy.",

keywords = "Band gap, Hafnium oxide, High-k gate dielectrics, Point defects, Quantum chemical molecular dynamics, Residual stress, Synchrotron-radiation photoemission spectroscopy",

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AU - Miura, Hideo

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AU - Ueda, Shigenori

AU - Yamashita, Yoshiyuki

AU - Kobayashi, Keisuke

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N2 - In this study, the degradation mechanism of dielectric properties of hafnium dioxide thin films was investigated by using quantum chemical molecular dynamics. Effects of point defects such as oxygen vacancies and carbon interstitials and residual stress in the films on their local band gap were analyzed quantitatively. Drastic decrease of the local band gap from about 5.7 eV to about 1.0 eV was caused by the formation of a defect-induced site in the band gap. Though this defect-induced site was recovered by additional oxidation, the remaining interstitial oxygen deteriorated the quality of the interface with tungsten electrode by forming new oxide between them. The estimated changes of the band gap and the interface structure were confirmed by experiments using synchrotron-radiation photoemission spectroscopy.

AB - In this study, the degradation mechanism of dielectric properties of hafnium dioxide thin films was investigated by using quantum chemical molecular dynamics. Effects of point defects such as oxygen vacancies and carbon interstitials and residual stress in the films on their local band gap were analyzed quantitatively. Drastic decrease of the local band gap from about 5.7 eV to about 1.0 eV was caused by the formation of a defect-induced site in the band gap. Though this defect-induced site was recovered by additional oxidation, the remaining interstitial oxygen deteriorated the quality of the interface with tungsten electrode by forming new oxide between them. The estimated changes of the band gap and the interface structure were confirmed by experiments using synchrotron-radiation photoemission spectroscopy.

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