Degradation of reliability of high-k gate dielectrics caused by point defects and residual stress

Hideo Miura, Ken Suzuki, Toru Ikoma, Seiji Samukawa, Hideki Yoshikawa, Shigenori Ueda, Yoshiyuki Yamashita, Keisuke Kobayashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this study, the degradation mechanism of dielectric properties of hafnium dioxide thin films was investigated by using quantum chemical molecular dynamics. Effects of point defects such as oxygen vacancies and carbon interstitials and residual stress in the films on their local band gap were analyzed quantitatively. Drastic decrease of the local band gap from about 5.7 eV to about 1.0 eV was caused by the formation of a defect-induced site in the band gap. Though this defect-induced site was recovered by additional oxidation, the remaining interstitial oxygen deteriorated the quality of the interface with tungsten electrode by forming new oxide between them. The estimated changes of the band gap and the interface structure were confirmed by experiments using synchrotron-radiation photoemission spectroscopy.

Original languageEnglish
Title of host publication46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
Pages713-714
Number of pages2
DOIs
Publication statusPublished - 2008
Event46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS - Phoenix, AZ, United States
Duration: 2008 Apr 272008 May 1

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
CountryUnited States
CityPhoenix, AZ
Period08/4/2708/5/1

Keywords

  • Band gap
  • Hafnium oxide
  • High-k gate dielectrics
  • Point defects
  • Quantum chemical molecular dynamics
  • Residual stress
  • Synchrotron-radiation photoemission spectroscopy

ASJC Scopus subject areas

  • Engineering(all)

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