Abstract
Ferroelectric thin films of Pb(Zr,Ti)O3 (PZT) were prepared on platinum (Pt) and SrRuO3 (SRO) thin film electrodes by the fourth harmonic wave (λ = 266 nm) of a pulsed Nd3+:YAG laser ablation technique. Ferroelectric degradation of ferroelectric thin film capacitors is investigated. As the results, the remanent polarization value of PZT films deposited on an SRO electrode as a buffer layer is remained constantly more than 1011 switching cycles. It is confirmed that polarization switching degradation is improved by using an SRO thin film electrode as a buffer layer.
Original language | English |
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Pages | 23-26 |
Number of pages | 4 |
Publication status | Published - 1998 Dec 1 |
Externally published | Yes |
Event | Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz Duration: 1998 Aug 24 → 1998 Aug 27 |
Other
Other | Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) |
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City | Montreaux, Switz |
Period | 98/8/24 → 98/8/27 |
ASJC Scopus subject areas
- Engineering(all)
- Materials Science(all)