Degradation of perovskite Pb(Zr,Ti)O3 thin films fabricated by pulsed laser ablation

Yoichiro Masuda, Shigetaka Fujita, Takashi Nishida, Hiroshi Masumoto, Toshio Hirai

Research output: Contribution to conferencePaperpeer-review

7 Citations (Scopus)

Abstract

Ferroelectric thin films of Pb(Zr,Ti)O3 (PZT) were prepared on platinum (Pt) and SrRuO3 (SRO) thin film electrodes by the fourth harmonic wave (λ = 266 nm) of a pulsed Nd3+:YAG laser ablation technique. Ferroelectric degradation of ferroelectric thin film capacitors is investigated. As the results, the remanent polarization value of PZT films deposited on an SRO electrode as a buffer layer is remained constantly more than 1011 switching cycles. It is confirmed that polarization switching degradation is improved by using an SRO thin film electrode as a buffer layer.

Original languageEnglish
Pages23-26
Number of pages4
Publication statusPublished - 1998 Dec 1
Externally publishedYes
EventProceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz
Duration: 1998 Aug 241998 Aug 27

Other

OtherProceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)
CityMontreaux, Switz
Period98/8/2498/8/27

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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