Degradation of perovskite Pb(Zr,Ti)O3 thin films fabricated by pulsed laser ablation

Yoichiro Masuda; Shigetaka Fujita; Takashi Nishida; Hiroshi Masumoto; Toshio Hirai

Degradation of perovskite Pb(Zr,Ti)O3 thin films fabricated by pulsed laser ablation

Yoichiro Masuda, Shigetaka Fujita, Takashi Nishida, Hiroshi Masumoto, Toshio Hirai

Research output: Contribution to conference › Paper › peer-review

Abstract

Ferroelectric thin films of Pb(Zr,Ti)O₃ (PZT) were prepared on platinum (Pt) and SrRuO₃ (SRO) thin film electrodes by the fourth harmonic wave (λ = 266 nm) of a pulsed Nd³⁺:YAG laser ablation technique. Ferroelectric degradation of ferroelectric thin film capacitors is investigated. As the results, the remanent polarization value of PZT films deposited on an SRO electrode as a buffer layer is remained constantly more than 10¹¹ switching cycles. It is confirmed that polarization switching degradation is improved by using an SRO thin film electrode as a buffer layer.

Original language	English
Pages	23-26
Number of pages	4
Publication status	Published - 1998 Dec 1
Externally published	Yes
Event	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) - Montreaux, Switz Duration: 1998 Aug 24 → 1998 Aug 27

Other

Other	Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)
City	Montreaux, Switz
Period	98/8/24 → 98/8/27

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)

Cite this

Degradation of perovskite Pb(Zr,Ti)O3 thin films fabricated by pulsed laser ablation. / Masuda, Yoichiro; Fujita, Shigetaka; Nishida, Takashi; Masumoto, Hiroshi; Hirai, Toshio.

1998. 23-26 Paper presented at Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI), Montreaux, Switz, .

Research output: Contribution to conference › Paper › peer-review

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title = "Degradation of perovskite Pb(Zr,Ti)O3 thin films fabricated by pulsed laser ablation",

abstract = "Ferroelectric thin films of Pb(Zr,Ti)O3 (PZT) were prepared on platinum (Pt) and SrRuO3 (SRO) thin film electrodes by the fourth harmonic wave (λ = 266 nm) of a pulsed Nd3+:YAG laser ablation technique. Ferroelectric degradation of ferroelectric thin film capacitors is investigated. As the results, the remanent polarization value of PZT films deposited on an SRO electrode as a buffer layer is remained constantly more than 1011 switching cycles. It is confirmed that polarization switching degradation is improved by using an SRO thin film electrode as a buffer layer.",

author = "Yoichiro Masuda and Shigetaka Fujita and Takashi Nishida and Hiroshi Masumoto and Toshio Hirai",

year = "1998",

month = dec,

day = "1",

language = "English",

pages = "23--26",

note = "Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI) ; Conference date: 24-08-1998 Through 27-08-1998",

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T1 - Degradation of perovskite Pb(Zr,Ti)O3 thin films fabricated by pulsed laser ablation

AU - Masuda, Yoichiro

AU - Fujita, Shigetaka

AU - Nishida, Takashi

AU - Masumoto, Hiroshi

AU - Hirai, Toshio

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Ferroelectric thin films of Pb(Zr,Ti)O3 (PZT) were prepared on platinum (Pt) and SrRuO3 (SRO) thin film electrodes by the fourth harmonic wave (λ = 266 nm) of a pulsed Nd3+:YAG laser ablation technique. Ferroelectric degradation of ferroelectric thin film capacitors is investigated. As the results, the remanent polarization value of PZT films deposited on an SRO electrode as a buffer layer is remained constantly more than 1011 switching cycles. It is confirmed that polarization switching degradation is improved by using an SRO thin film electrode as a buffer layer.

AB - Ferroelectric thin films of Pb(Zr,Ti)O3 (PZT) were prepared on platinum (Pt) and SrRuO3 (SRO) thin film electrodes by the fourth harmonic wave (λ = 266 nm) of a pulsed Nd3+:YAG laser ablation technique. Ferroelectric degradation of ferroelectric thin film capacitors is investigated. As the results, the remanent polarization value of PZT films deposited on an SRO electrode as a buffer layer is remained constantly more than 1011 switching cycles. It is confirmed that polarization switching degradation is improved by using an SRO thin film electrode as a buffer layer.

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T2 - Proceedings of the 1998 11th IEEE International Symposium on Appliations of Ferroelectrics (ISAF-XI)

Y2 - 24 August 1998 through 27 August 1998

ER -

Degradation of perovskite Pb(Zr,Ti)O3 thin films fabricated by pulsed laser ablation

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