The electrostatic and radiation damage incurred during plasma processing is studied using MOS (metal-oxide-semiconductor) capacitors with various sizes of surface metal pad attached to the gate electrode as charge collectors. Oxides grown in a wet ambient show a sharper breakdown distribution and a higher resistance to plasma damage than oxides grown in a dry ambient. Residual trapped holes near the polysilicon-gate/SiO2 interface, which cause anomalous leakage currents in negative gate IV characteristics, may be an indication of the latent damage from electrostatic charging. These trapped charges are believed to arise from hole tunneling during plasma exposure due to electrostatic induced positive bias on the gate electrode. Breakdown characteristics are significantly degraded when electrons are injected from the polysilicon gate as opposed to injection from the silicon substrate. The most prominent effect of the electrostatic damage during plasma processing is the degradation in breakdown voltages of defective oxide.
|Number of pages||5|
|Publication status||Published - 1989 Dec 1|
|Event||International Symposium on VLSI Technology, Systems and Applications - Proceedings of Technical Papers - Taipei, Taiwan|
Duration: 1989 May 17 → 1989 May 19
|Other||International Symposium on VLSI Technology, Systems and Applications - Proceedings of Technical Papers|
|Period||89/5/17 → 89/5/19|
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