Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons

Yasuki Okuno, Shuichi Okuda, Masafumi Akiyoshi, Takashi Oka, Shirou Kawakita, Mitsuru Imaizumi, Hiroaki Kusawake, Kan Hua Lee, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InGaP solar cells with high radiation resistivity are not expected to be degraded by irradiation with less than 100 keV electron-beams. Recently, it was observed that the InGaP solar cells were degraded by irradiation with 60 keV electron-beams. However, a mechanism of this degradation is unclear. In this study, we use deep-level transient spectroscopy (DLTS) to investigate a carrier trap levels in InGaPsolar cells irradiated with less than 100 keV electron-beams. The result of DLTS indicates that non-ionizing energy loss (NIEL) may not explain the degradation caused by low-energy electron beams well. Additionally, we propose displacement threshold energy (Ed) of phosphorus in InGaP by calculating introduction rate of irradiation-induce defect.

Original languageEnglish
Title of host publication2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages2596-2600
Number of pages5
ISBN (Electronic)9781509027248
DOIs
Publication statusPublished - 2016 Nov 18
Externally publishedYes
Event43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States
Duration: 2016 Jun 52016 Jun 10

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
Volume2016-November
ISSN (Print)0160-8371

Other

Other43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
CountryUnited States
CityPortland
Period16/6/516/6/10

Keywords

  • deep-level transient spectroscopy
  • displacement threshold energy
  • electron irradiation
  • InGaP solar cells
  • non-ionizing energy loss

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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  • Cite this

    Okuno, Y., Okuda, S., Akiyoshi, M., Oka, T., Kawakita, S., Imaizumi, M., Kusawake, H., Lee, K. H., & Yamaguchi, M. (2016). Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 2596-2600). [7750118] (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7750118