TY - GEN
T1 - Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons
AU - Okuno, Yasuki
AU - Okuda, Shuichi
AU - Akiyoshi, Masafumi
AU - Oka, Takashi
AU - Kawakita, Shirou
AU - Imaizumi, Mitsuru
AU - Kusawake, Hiroaki
AU - Lee, Kan Hua
AU - Yamaguchi, Masafumi
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - InGaP solar cells with high radiation resistivity are not expected to be degraded by irradiation with less than 100 keV electron-beams. Recently, it was observed that the InGaP solar cells were degraded by irradiation with 60 keV electron-beams. However, a mechanism of this degradation is unclear. In this study, we use deep-level transient spectroscopy (DLTS) to investigate a carrier trap levels in InGaPsolar cells irradiated with less than 100 keV electron- beams. The result of DLTS indicates that non-ionizing energy loss (NIEL) may not explain the degradation caused by low-energy electron beams well. Additionally, we propose displacement threshold energy (Ed) of phosphorus in InGaP by calculating introduction rate of irradiation-induce defect.
AB - InGaP solar cells with high radiation resistivity are not expected to be degraded by irradiation with less than 100 keV electron-beams. Recently, it was observed that the InGaP solar cells were degraded by irradiation with 60 keV electron-beams. However, a mechanism of this degradation is unclear. In this study, we use deep-level transient spectroscopy (DLTS) to investigate a carrier trap levels in InGaPsolar cells irradiated with less than 100 keV electron- beams. The result of DLTS indicates that non-ionizing energy loss (NIEL) may not explain the degradation caused by low-energy electron beams well. Additionally, we propose displacement threshold energy (Ed) of phosphorus in InGaP by calculating introduction rate of irradiation-induce defect.
KW - Deep-level transient spectroscopy
KW - Displacement threshold energy
KW - Electron irradiation
KW - InGaP solar cells
KW - Non-ionizing energy loss
UR - http://www.scopus.com/inward/record.url?scp=85048515137&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048515137&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2017.8366605
DO - 10.1109/PVSC.2017.8366605
M3 - Conference contribution
AN - SCOPUS:85048515137
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 845
EP - 848
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -