Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons

Yasuki Okuno; Shuichi Okuda; Masafumi Akiyoshi; Takashi Oka; Shirou Kawakita; Mitsuru Imaizumi; Hiroaki Kusawake; Kan Hua Lee; Masafumi Yamaguchi

doi:10.1109/PVSC.2017.8366605

Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons

Yasuki Okuno, Shuichi Okuda, Masafumi Akiyoshi, Takashi Oka, Shirou Kawakita, Mitsuru Imaizumi, Hiroaki Kusawake, Kan Hua Lee, Masafumi Yamaguchi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

InGaP solar cells with high radiation resistivity are not expected to be degraded by irradiation with less than 100 keV electron-beams. Recently, it was observed that the InGaP solar cells were degraded by irradiation with 60 keV electron-beams. However, a mechanism of this degradation is unclear. In this study, we use deep-level transient spectroscopy (DLTS) to investigate a carrier trap levels in InGaPsolar cells irradiated with less than 100 keV electron- beams. The result of DLTS indicates that non-ionizing energy loss (NIEL) may not explain the degradation caused by low-energy electron beams well. Additionally, we propose displacement threshold energy (Ed) of phosphorus in InGaP by calculating introduction rate of irradiation-induce defect.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	845-848
Number of pages	4
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366605
Publication status	Published - 2017
Externally published	Yes
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 2017 Jun 25 → 2017 Jun 30

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Other

Other	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country	United States
City	Washington
Period	17/6/25 → 17/6/30

Keywords

Deep-level transient spectroscopy
Displacement threshold energy
Electron irradiation
InGaP solar cells
Non-ionizing energy loss

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

UN SDGs

This output contributes to the following Sustainable Development Goal(s)

Access to Document

10.1109/PVSC.2017.8366605

Fingerprint Dive into the research topics of 'Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons'. Together they form a unique fingerprint.

Cite this

Okuno, Y., Okuda, S., Akiyoshi, M., Oka, T., Kawakita, S., Imaizumi, M., Kusawake, H., Lee, K. H., & Yamaguchi, M. (2017). Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 845-848). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366605

Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons. / Okuno, Yasuki; Okuda, Shuichi; Akiyoshi, Masafumi; Oka, Takashi; Kawakita, Shirou; Imaizumi, Mitsuru; Kusawake, Hiroaki; Lee, Kan Hua; Yamaguchi, Masafumi.

2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 845-848 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Okuno, Y, Okuda, S, Akiyoshi, M, Oka, T, Kawakita, S, Imaizumi, M, Kusawake, H, Lee, KH & Yamaguchi, M 2017, Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 845-848, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 17/6/25. https://doi.org/10.1109/PVSC.2017.8366605

Okuno Y, Okuda S, Akiyoshi M, Oka T, Kawakita S, Imaizumi M et al. Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 845-848. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). https://doi.org/10.1109/PVSC.2017.8366605

Okuno, Yasuki ; Okuda, Shuichi ; Akiyoshi, Masafumi ; Oka, Takashi ; Kawakita, Shirou ; Imaizumi, Mitsuru ; Kusawake, Hiroaki ; Lee, Kan Hua ; Yamaguchi, Masafumi. / Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 845-848 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

@inproceedings{2a31e2dd32dd4e82afa2f6a2c5105dc1,

title = "Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons",

abstract = "InGaP solar cells with high radiation resistivity are not expected to be degraded by irradiation with less than 100 keV electron-beams. Recently, it was observed that the InGaP solar cells were degraded by irradiation with 60 keV electron-beams. However, a mechanism of this degradation is unclear. In this study, we use deep-level transient spectroscopy (DLTS) to investigate a carrier trap levels in InGaPsolar cells irradiated with less than 100 keV electron- beams. The result of DLTS indicates that non-ionizing energy loss (NIEL) may not explain the degradation caused by low-energy electron beams well. Additionally, we propose displacement threshold energy (Ed) of phosphorus in InGaP by calculating introduction rate of irradiation-induce defect.",

keywords = "Deep-level transient spectroscopy, Displacement threshold energy, Electron irradiation, InGaP solar cells, Non-ionizing energy loss",

author = "Yasuki Okuno and Shuichi Okuda and Masafumi Akiyoshi and Takashi Oka and Shirou Kawakita and Mitsuru Imaizumi and Hiroaki Kusawake and Lee, {Kan Hua} and Masafumi Yamaguchi",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/PVSC.2017.8366605",

language = "English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "845--848",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

}

TY - GEN

T1 - Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons

AU - Okuno, Yasuki

AU - Okuda, Shuichi

AU - Akiyoshi, Masafumi

AU - Oka, Takashi

AU - Kawakita, Shirou

AU - Imaizumi, Mitsuru

AU - Kusawake, Hiroaki

AU - Lee, Kan Hua

AU - Yamaguchi, Masafumi

PY - 2017

Y1 - 2017

N2 - InGaP solar cells with high radiation resistivity are not expected to be degraded by irradiation with less than 100 keV electron-beams. Recently, it was observed that the InGaP solar cells were degraded by irradiation with 60 keV electron-beams. However, a mechanism of this degradation is unclear. In this study, we use deep-level transient spectroscopy (DLTS) to investigate a carrier trap levels in InGaPsolar cells irradiated with less than 100 keV electron- beams. The result of DLTS indicates that non-ionizing energy loss (NIEL) may not explain the degradation caused by low-energy electron beams well. Additionally, we propose displacement threshold energy (Ed) of phosphorus in InGaP by calculating introduction rate of irradiation-induce defect.

AB - InGaP solar cells with high radiation resistivity are not expected to be degraded by irradiation with less than 100 keV electron-beams. Recently, it was observed that the InGaP solar cells were degraded by irradiation with 60 keV electron-beams. However, a mechanism of this degradation is unclear. In this study, we use deep-level transient spectroscopy (DLTS) to investigate a carrier trap levels in InGaPsolar cells irradiated with less than 100 keV electron- beams. The result of DLTS indicates that non-ionizing energy loss (NIEL) may not explain the degradation caused by low-energy electron beams well. Additionally, we propose displacement threshold energy (Ed) of phosphorus in InGaP by calculating introduction rate of irradiation-induce defect.

KW - Deep-level transient spectroscopy

KW - Displacement threshold energy

KW - Electron irradiation

KW - InGaP solar cells

KW - Non-ionizing energy loss

UR - http://www.scopus.com/inward/record.url?scp=85048515137&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85048515137&partnerID=8YFLogxK

U2 - 10.1109/PVSC.2017.8366605

DO - 10.1109/PVSC.2017.8366605

M3 - Conference contribution

AN - SCOPUS:85048515137

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 845

EP - 848

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -

Degradation mechanisms of InGaP solar cells by irradiation with less than 100 keV electrons

Abstract

Publication series

Other

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

Other files and links

Cite this