Degradation mechanism of dielectric properties of HfO2±x due to interaction of oxygen composition and strain

K. Suzuki, Y. Ito, H. Ito, H. Miura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
DOIs
Publication statusPublished - 2007 Sep 26
Event2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China
Duration: 2007 Apr 232007 Apr 25

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
CountryTaiwan, Province of China
CityHsinchu
Period07/4/2307/4/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Suzuki, K., Ito, Y., Ito, H., & Miura, H. (2007). Degradation mechanism of dielectric properties of HfO2±x due to interaction of oxygen composition and strain. In 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers [4239479] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2007.378911