@inproceedings{a85706f3c14a4b2780663e729f47db8e,
title = "Degradation in HfSiON film induced by electrical stress application",
abstract = "The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy Vo, and structural transformation{"} in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While Vo generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature. The transformation is derived by intensive mass transport in the dielectric film, thereby can not be annealed out.",
author = "R. Hasunuma and C. Tamura and T. Nomura and Y. Kikuchi and K. Ohmori and M. Sato and A. Uedono and T. Chikyow and K. Shiraishi and K. Yamada and K. Yamabe",
year = "2010",
month = dec,
day = "30",
doi = "10.1149/1.3372581",
language = "English",
isbn = "9781566777926",
series = "ECS Transactions",
number = "2",
pages = "263--272",
booktitle = "Dielectrics for Nanosystems 4",
edition = "2",
note = "4th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 217th ECS Meeting ; Conference date: 26-04-2010 Through 28-04-2010",
}