Degradation in HfSiON film induced by electrical stress application

R. Hasunuma; C. Tamura; T. Nomura; Y. Kikuchi; K. Ohmori; M. Sato; A. Uedono; T. Chikyow; K. Shiraishi; K. Yamada; K. Yamabe

doi:10.1149/1.3372581

Degradation in HfSiON film induced by electrical stress application

R. Hasunuma, C. Tamura, T. Nomura, Y. Kikuchi, K. Ohmori, M. Sato, A. Uedono, T. Chikyow, K. Shiraishi, K. Yamada, K. Yamabe

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy Vo, and structural transformation" in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While Vo generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature. The transformation is derived by intensive mass transport in the dielectric film, thereby can not be annealed out.

Original language	English
Title of host publication	Dielectrics for Nanosystems 4
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing
Publisher	Electrochemical Society Inc.
Pages	263-272
Number of pages	10
Edition	2
ISBN (Electronic)	9781607681427
ISBN (Print)	9781566777926
DOIs	https://doi.org/10.1149/1.3372581
Publication status	Published - 2010
Externally published	Yes

Publication series

Name	ECS Transactions
Number	2
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3372581

Cite this

Hasunuma, R., Tamura, C., Nomura, T., Kikuchi, Y., Ohmori, K., Sato, M., Uedono, A., Chikyow, T., Shiraishi, K., Yamada, K., & Yamabe, K. (2010). Degradation in HfSiON film induced by electrical stress application. In Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing (2 ed., pp. 263-272). (ECS Transactions; Vol. 28, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.3372581

Degradation in HfSiON film induced by electrical stress application. / Hasunuma, R.; Tamura, C.; Nomura, T.; Kikuchi, Y.; Ohmori, K.; Sato, M.; Uedono, A.; Chikyow, T.; Shiraishi, K.; Yamada, K.; Yamabe, K.

Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing. 2. ed. Electrochemical Society Inc., 2010. p. 263-272 (ECS Transactions; Vol. 28, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hasunuma, R, Tamura, C, Nomura, T, Kikuchi, Y, Ohmori, K, Sato, M, Uedono, A, Chikyow, T, Shiraishi, K, Yamada, K & Yamabe, K 2010, Degradation in HfSiON film induced by electrical stress application. in Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing. 2 edn, ECS Transactions, no. 2, vol. 28, Electrochemical Society Inc., pp. 263-272. https://doi.org/10.1149/1.3372581

Hasunuma, R. ; Tamura, C. ; Nomura, T. ; Kikuchi, Y. ; Ohmori, K. ; Sato, M. ; Uedono, A. ; Chikyow, T. ; Shiraishi, K. ; Yamada, K. ; Yamabe, K. / Degradation in HfSiON film induced by electrical stress application. Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing. 2. ed. Electrochemical Society Inc., 2010. pp. 263-272 (ECS Transactions; 2).

@inproceedings{a85706f3c14a4b2780663e729f47db8e,

title = "Degradation in HfSiON film induced by electrical stress application",

abstract = "The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy Vo, and structural transformation{"} in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While Vo generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature. The transformation is derived by intensive mass transport in the dielectric film, thereby can not be annealed out.",

author = "R. Hasunuma and C. Tamura and T. Nomura and Y. Kikuchi and K. Ohmori and M. Sato and A. Uedono and T. Chikyow and K. Shiraishi and K. Yamada and K. Yamabe",

year = "2010",

doi = "10.1149/1.3372581",

language = "English",

isbn = "9781566777926",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "2",

pages = "263--272",

booktitle = "Dielectrics for Nanosystems 4",

edition = "2",

}

TY - GEN

T1 - Degradation in HfSiON film induced by electrical stress application

AU - Hasunuma, R.

AU - Tamura, C.

AU - Nomura, T.

AU - Kikuchi, Y.

AU - Ohmori, K.

AU - Sato, M.

AU - Uedono, A.

AU - Chikyow, T.

AU - Shiraishi, K.

AU - Yamada, K.

AU - Yamabe, K.

PY - 2010

Y1 - 2010

N2 - The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy Vo, and structural transformation" in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While Vo generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature. The transformation is derived by intensive mass transport in the dielectric film, thereby can not be annealed out.

AB - The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy Vo, and structural transformation" in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While Vo generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature. The transformation is derived by intensive mass transport in the dielectric film, thereby can not be annealed out.

UR - http://www.scopus.com/inward/record.url?scp=78650575759&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78650575759&partnerID=8YFLogxK

U2 - 10.1149/1.3372581

DO - 10.1149/1.3372581

M3 - Conference contribution

AN - SCOPUS:78650575759

SN - 9781566777926

T3 - ECS Transactions

SP - 263

EP - 272

BT - Dielectrics for Nanosystems 4

PB - Electrochemical Society Inc.

ER -

Degradation in HfSiON film induced by electrical stress application

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