Degradation in HfSiON film induced by electrical stress application

R. Hasunuma; C. Tamura; T. Nomura; Y. Kikuchi; K. Ohmori; M. Sato; A. Uedono; T. Chikyow; K. Shiraishi; K. Yamada; K. Yamabe

doi:10.1149/1.3372581

Degradation in HfSiON film induced by electrical stress application

R. Hasunuma, C. Tamura, T. Nomura, Y. Kikuchi, K. Ohmori, M. Sato, A. Uedono, T. Chikyow, K. Shiraishi, K. Yamada, K. Yamabe

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy Vo, and structural transformation" in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While Vo generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature. The transformation is derived by intensive mass transport in the dielectric film, thereby can not be annealed out.

Original language	English
Title of host publication	Dielectrics for Nanosystems 4
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing
Publisher	Electrochemical Society Inc.
Pages	263-272
Number of pages	10
Edition	2
ISBN (Electronic)	9781607681427
ISBN (Print)	9781566777926
DOIs	https://doi.org/10.1149/1.3372581
Publication status	Published - 2010
Externally published	Yes

Publication series

Name	ECS Transactions
Number	2
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

ASJC Scopus subject areas

Engineering(all)

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10.1149/1.3372581

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Hasunuma, R., Tamura, C., Nomura, T., Kikuchi, Y., Ohmori, K., Sato, M., Uedono, A., Chikyow, T., Shiraishi, K., Yamada, K., & Yamabe, K. (2010). Degradation in HfSiON film induced by electrical stress application. In Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing (2 ed., pp. 263-272). (ECS Transactions; Vol. 28, No. 2). Electrochemical Society Inc.. https://doi.org/10.1149/1.3372581

Degradation in HfSiON film induced by electrical stress application. / Hasunuma, R.; Tamura, C.; Nomura, T. et al.

Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing. 2. ed. Electrochemical Society Inc., 2010. p. 263-272 (ECS Transactions; Vol. 28, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hasunuma, R, Tamura, C, Nomura, T, Kikuchi, Y, Ohmori, K, Sato, M, Uedono, A, Chikyow, T, Shiraishi, K, Yamada, K & Yamabe, K 2010, Degradation in HfSiON film induced by electrical stress application. in Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing. 2 edn, ECS Transactions, no. 2, vol. 28, Electrochemical Society Inc., pp. 263-272. https://doi.org/10.1149/1.3372581

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Degradation in HfSiON film induced by electrical stress application

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