Degradation in HfSiON film induced by electrical stress application

R. Hasunuma, C. Tamura, T. Nomura, Y. Kikuchi, K. Ohmori, M. Sato, A. Uedono, T. Chikyow, K. Shiraishi, K. Yamada, K. Yamabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The dielectric degradation under electrical stress application was attributed to generation of oxygen vacancy Vo, and structural transformation" in HfSiON films, in addition to widely known charge trapping. The former two result from ion drift under electrical field due to its ionic character of Hf-based dielectrics. While Vo generation and charge trapping are atomic-range phenomena, it is surprising that long-range structural transformation can also occur under electrical filed before dielectric breakdown even at room temperature. The transformation is derived by intensive mass transport in the dielectric film, thereby can not be annealed out.

Original languageEnglish
Title of host publicationDielectrics for Nanosystems 4
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
PublisherElectrochemical Society Inc.
Pages263-272
Number of pages10
Edition2
ISBN (Electronic)9781607681427
ISBN (Print)9781566777926
DOIs
Publication statusPublished - 2010
Externally publishedYes

Publication series

NameECS Transactions
Number2
Volume28
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint

Dive into the research topics of 'Degradation in HfSiON film induced by electrical stress application'. Together they form a unique fingerprint.

Cite this