Degradation and breakdown of W-La2O3 stack after annealing in N2

Joel Molina, Alfonso Torres, Wilfrido Calleja, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    We report the effect of relatively high-voltage stressing (under substrate injection) on the stress-induced leakage current (SILC) and breakdown of W-La2O3 stacked structures. It is shown that the gate area of the metal-insulator-semiconductor (MIS) devices under evaluation influences their final degradation characteristics after stress. Once the samples reach breakdown, their post-breakdown current-voltage (I-V) characteristics suggest that leakage spots are highly localized and are caused by the accumulation of defects.

    Original languageEnglish
    Pages (from-to)7076-7080
    Number of pages5
    JournalJapanese journal of applied physics
    Volume47
    Issue number9 PART 1
    DOIs
    Publication statusPublished - 2008 Sep 12

    Keywords

    • Breakdown
    • LaO
    • PMA
    • Reliability
    • SILC

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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  • Cite this

    Molina, J., Torres, A., Calleja, W., Kakushima, K., Ahmet, P., Tsutsui, K., Sugii, N., Hattori, T., & Iwai, H. (2008). Degradation and breakdown of W-La2O3 stack after annealing in N2. Japanese journal of applied physics, 47(9 PART 1), 7076-7080. https://doi.org/10.1143/JJAP.47.7076