The characterization of zinc oxide (ZnO) thin films grown on ScAlMgO4 substrates by mean of positron annihilation was reported. The photoluminescence spectra and Doppler braodening spectra of annihilation radiation for the ZnO films deposited by laser molecular-beam epitaxy and single-crystal ZnO was measured. It was found that the monoenergetic positron beam technique can be used to characterize ZnO thin films grown by molecular beam epitaxy (MBE).
ASJC Scopus subject areas
- Physics and Astronomy(all)