Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam

A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z. Q. Chen, S. F. Chichibu, H. Koinuma

Research output: Contribution to journalArticle

103 Citations (Scopus)

Abstract

The characterization of zinc oxide (ZnO) thin films grown on ScAlMgO4 substrates by mean of positron annihilation was reported. The photoluminescence spectra and Doppler braodening spectra of annihilation radiation for the ZnO films deposited by laser molecular-beam epitaxy and single-crystal ZnO was measured. It was found that the monoenergetic positron beam technique can be used to characterize ZnO thin films grown by molecular beam epitaxy (MBE).

Original languageEnglish
Pages (from-to)2481-2485
Number of pages5
JournalJournal of Applied Physics
Volume93
Issue number5
DOIs
Publication statusPublished - 2003 Mar 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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