Defects generation and annihilation in GaN grown on patterned silicon substrate

N. Sawaki, S. Ito, T. Nakagit, H. Iwat, T. Tanikawa, M. Irie, Y. Honda, M. Yamaguchi, H. Amano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The behavior of threading dislocations and stacking faults were investigated in a (1-101) GaN grown on a patterned (001)Si substrate by selective metal-organic-vapor-phase-epitaxy with an AlN buffer layer. Cross sectional transmission electron microscopy images showed that threading dislocations are generated at the hetero-interface of GaN/AlN/Si induced by misfit dislocations, while stacking faults are generated when two crystals with different crystal axes coalesce. We found some of them are annihilated making a loop, where two stacking faults have been generated at a short distance. This suggests a rout to decrease the density of stacking faults in III nitrides.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VIII
DOIs
Publication statusPublished - 2013 Jun 12
EventSPIE Symposium on Gallium Nitride Materials and Devices VIII - San Francisco, CA, United States
Duration: 2013 Feb 42013 Feb 7

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8625
ISSN (Print)0277-786X

Other

OtherSPIE Symposium on Gallium Nitride Materials and Devices VIII
CountryUnited States
CitySan Francisco, CA
Period13/2/413/2/7

Keywords

  • GaN
  • MOVPE
  • Semi-polar
  • Si substrate
  • Stacking fault
  • Threading dislocation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Sawaki, N., Ito, S., Nakagit, T., Iwat, H., Tanikawa, T., Irie, M., Honda, Y., Yamaguchi, M., & Amano, H. (2013). Defects generation and annihilation in GaN grown on patterned silicon substrate. In Gallium Nitride Materials and Devices VIII [86250K] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8625). https://doi.org/10.1117/12.2002738