Defect study of proton-irradiated liquid-encapsulated Czochralski GaAs using the positron-annihilation technique

Y. Itoh, K. H. Lee, H. Murakami, Ren Iwata

    Research output: Contribution to journalArticle

    Abstract

    The positron lifetime of undoped Liquid-Encapsulated Czochralski (LEC)-GaAs and Si-doped (1.3×1018 cm-3) LEC-GaAs was measured before and after irradiation with protons (dose 1×1015/cm2, 15 MeV). In Si-doped GaAs, the decrease of positron lifetime at temperatures between 10 and 300 K are due to the decrease of the positron-diffusion length and the increase of the effective shallow traps such as antisite GaAs. The annealing stage of the proton-irradiation-induced defects which show the different behavior from that of electron-irradiation-induced defects suggests that proton irradiation creates more complicated defect complexes, containing vacancies rather than isolated vacancy-type defects or simple complexes which have been observed during electron-irradiation processes. Above 700 K, proton-irradiation-induced defects such as vacancy-type defects and simple vacancy complexes are almost annealed out, while Si-induced defects such as SiGa-VGa complexes cannot be annealed out above 973 K.

    Original languageEnglish
    Pages (from-to)57-60
    Number of pages4
    JournalApplied Physics A Materials Science & Processing
    Volume60
    Issue number1
    DOIs
    Publication statusPublished - 1995 Jan 1

    Keywords

    • 72.80.Ey
    • 78.70.Bj

    ASJC Scopus subject areas

    • Chemistry(all)
    • Materials Science(all)

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