ZnO film was grown on a (0001) sapphire substrate by electron cyclotron resonance-assisted molecular beam epitaxy (ECR-assisted MBE). Details of lattice defects such as threading dislocations and subgrain boundaries were analyzed on atomic scale. The overlapping manner of the ZnO film and the sapphire substrate was characterized taking into account moiré fringes of HREM images.
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2001 Mar 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering