Defect structure of epitaxial ZnO films on (0001) sapphire studied by transmission electron microscopy

S. H. Lim, D. Shindo, H. B. Kang, K. Nakamura

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)

Abstract

ZnO film was grown on a (0001) sapphire substrate by electron cyclotron resonance-assisted molecular beam epitaxy (ECR-assisted MBE). Details of lattice defects such as threading dislocations and subgrain boundaries were analyzed on atomic scale. The overlapping manner of the ZnO film and the sapphire substrate was characterized taking into account moiré fringes of HREM images.

Original languageEnglish
Pages (from-to)506-510
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume19
Issue number2
DOIs
Publication statusPublished - 2001 Mar 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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