Defect structure of Cu-rich and In-rich chalcopyrite CuInSe2 films grown on GaAs

Olof Hellman, Shunichiro Tanaka

Research output: Contribution to journalConference articlepeer-review

Abstract

Using Transmission Electron Microscopy, we examine the defect structure of Cu-rich and In-rich CuInSe2 films grown by Molecular Beam Epitaxy on GaAs (100) substrates. A surprisingly high density of cation sublattice stacking faults on (001) planes are observed in the Cu-rich films. Because these stacking faults are extremely flat and extend thousands of Angstroms over the surface, and because they are not observed in other, non-Cu-rich films, we argue that they are a consequence of a surface structural change during growth, induced by the excess Cu. Two other types of defects are also observed: near the CuInSe2/GaAs interface, there is a high concentration of dislocations, stacking faults and domain boundaries. In the In-rich films, stacking faults and twin-type defects on {112} planes extend throughout the thickness of the grown film.

Original languageEnglish
Pages (from-to)467-472
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume399
Publication statusPublished - 1996 Jan 1
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: 1995 Nov 261995 Dec 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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