Defect structure in neutron-irradiated -6LiAl and -7LiAl: Electrical resistivity and Li diffusion

Hiroyuki Sugai, M. Tanase, M. Yahagi, T. Ashida, H. Hamanaka, K. Kuriyama, K. Iwamura

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Abstract

The neutron-irradiation effects on the electrical resistivities of -6LiAl and -7LiAl with 48 54 at. % Li at room temperature are presented. A remarkable decrease of the electrical resistivity is observed in the neutron-irradiated -6LiAl with around 50 at. % Li, but not in the neutron-irradiated -7LiAl. It is suggested that the defect complex (VLi-LiAl) composed of VLi (a vacancy at the Li site) and LiAl (a Li antisite atom at the Al site) is an effective scatterer for carriers in -6LiAl, and the breakup of the VLi-LiAl complex due to the knock on of neutron transmuted H3 and He4 induces the abrupt decrease of the electrical resistivity. A carrier-scattering model based on the defect structure of -LiAl explains consistently the electrical resistivity of -LiAl before and after neutron irradiation. The Li self-diffusion constant shows a linear relationship for [fVLi] (Li content 1.9 at. %) or [VLi-LiAl] (Li content 1.9 at. %) using a conventional diffusion model. This strongly suggests that defect concentrations estimated in the present work are reasonable. We also find that the Li out diffusion is obstructed by the breakup of the VLi-LiAl complex due to neutron irradiation.

Original languageEnglish
Pages (from-to)4050-4059
Number of pages10
JournalPhysical Review B
Volume52
Issue number6
DOIs
Publication statusPublished - 1995 Jan 1

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Sugai, H., Tanase, M., Yahagi, M., Ashida, T., Hamanaka, H., Kuriyama, K., & Iwamura, K. (1995). Defect structure in neutron-irradiated -6LiAl and -7LiAl: Electrical resistivity and Li diffusion. Physical Review B, 52(6), 4050-4059. https://doi.org/10.1103/PhysRevB.52.4050