Defect structural evolution in high purity tungsten irradiated with electrons using high voltage electron microscope

S. Fukuzumi, T. Yoshiie, Yuhki Satoh, Q. Xu, H. Mori, M. Kawai

Research output: Contribution to journalConference articlepeer-review

21 Citations (Scopus)

Abstract

Four types of high purity tungsten were irradiated with 2 MeV electrons to 5 dpa using a high voltage electron microscope, and defect structural evolutions were examined as a function of the irradiation temperature and the concentration of impurity atoms. Three of materials were made by sintering of tungsten powder with purity of 99.999% (5N-W), 99.99% (PF-W) and 99.95% (N-W), and one was a chemical vapor deposited tungsten of 99.9999% (CVD-W) purity. The formation of interstitial type dislocation loops is observed above room temperature by electron irradiation. In sintered tungsten, the number density of loops increases with increasing density of impurity atoms, i.e., N-W > PF-W > 5N-W. The density of loops in CVD-W is relatively high, contrary to its purity. In CVD-W, a heterogeneous formation of loops is observed at above 573 K. Loops are aligned on layers, and no loops are formed between the layers. All four types of specimens have a change in slop of the temperature dependence of loop number density at around 500 K which is caused by impurity atoms. Results of radioactivation analysis and hardness testing are also presented.

Original languageEnglish
Pages (from-to)308-312
Number of pages5
JournalJournal of Nuclear Materials
Volume343
Issue number1-3
DOIs
Publication statusPublished - 2005 Aug 1
EventProceedings of the 6th International Workshop on Spallation Materials Technology IWSMT-6 -
Duration: 2003 Nov 302003 Dec 5

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Materials Science(all)
  • Nuclear Energy and Engineering

Fingerprint Dive into the research topics of 'Defect structural evolution in high purity tungsten irradiated with electrons using high voltage electron microscope'. Together they form a unique fingerprint.

Cite this