Defect levels in BaMgAl10O17 and SrMgAl 10O17: Theoretical and experimental approach

H. Onuma, H. Tanno, R. Sahnoun, M. Koyama, H. Tsuboi, Nozomu Hatakeyama, A. Endou, H. Takaba, Momoji Kubo, C. A. Del Carpio, H. Kajiyama, T. Shinoda, Akira Miyamoto

Research output: Contribution to conferencePaperpeer-review


In this study, we investigated the defect levels in the BaMgAl 10O17 and SrMgAl10O17 both theoretically and experimentally. The thermo-luminescence spectra showed the existences of the shallow and deep defect levels in the BaMgAl 10O17 and SrMgAl10O17 phosphors. The calculation results suggested that the structural defects such as oxygen vacancies would work as the trap for excited carrier. Moreover, the calculated binding energies and the formation energies of an oxygen vacancy suggest that the SrMgA10O17 and conduction plane can be degradated.

Original languageEnglish
Number of pages4
Publication statusPublished - 2007 Dec 1
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: 2007 Dec 52007 Dec 5


Other14th International Display Workshops, IDW '07

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics


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