Defect-free germanium etching for 3D Fin MOSFET using neutral beam etching

En Tzu Lee, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, Seiji Samukawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Several-ten nanometer-width Ge Fin structure with defect-free, vertical and smooth sidewall were successively delineated by a neutral beam etching method using pure Cl2 gas chemistry for developing three dimensional channel FETs. The cross-sectional profile of the Ge Fins tended to have bottom tails without undercuts beneath etching masks in the best etching conditions. The bottom tails were eliminated by increasing Cl neutral beam energy and increasing substrate temperature. Very precise dimension control became possible by adjusting those two conditions. High resolution TEM observations revealed that the Ge Fin sidewalls, which were supposed to be FET channels, etched by the neutral beam seemed very smooth in a substantially atomic level while those ones etched in a plasma had relatively rough surfaces due to plasma damages.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages816-818
Number of pages3
ISBN (Electronic)9781509039142
DOIs
Publication statusPublished - 2016 Nov 21
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 2016 Aug 222016 Aug 25

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Other

Other16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period16/8/2216/8/25

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

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    Lee, E. T., Noda, S., Mizubayashi, W., Endo, K., & Samukawa, S. (2016). Defect-free germanium etching for 3D Fin MOSFET using neutral beam etching. In 16th International Conference on Nanotechnology - IEEE NANO 2016 (pp. 816-818). [7751453] (16th International Conference on Nanotechnology - IEEE NANO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NANO.2016.7751453