Defect density of crystalline Si films fabricated by high-speed zone melting crystallization for solar cells

Shuhei Yokoyama, Manabu Ihara, Hiroaki Hashizume, Chiaki Yokoyama, Hiroshi Komiyama

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

The defect density of crystalline Si films fabricated by high-speed zone melting crystallization (ZMC) of amorphous Si (a-Si) and by high-speed zone melting re-crystallization (ZMR) of polycrystalline Si (poly-Si) was investigated by using electron spin resonance (ESR). The crystal defect density of the sandwich-structured a-Si ZMC films (SiO2 film/ Si film/ SiO2 film) was lower than that of the sandwich-structured poly-Si ZMR films for a lower-heater temperature range of 1470°C to 1570°C and for an upper-heater scan-speed range of 0.7-4.5 mm/s. The defect density of the bulk a-Si ZMC films was below the detection limit of ESR, even at high scan speed of 7.0 mm/s. Therefore, a-Si ZMC films can be used to fabricate solar cells that have an efficiency higher than those fabricated by current processes involving poly-Si ZMR films.

Original languageEnglish
Pages (from-to)312-315
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
Publication statusPublished - 2002 Dec 1
Event29th IEEE Photovoltaic Specialists Conference - New Orleans, LA, United States
Duration: 2002 May 192002 May 24

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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