TY - JOUR
T1 - Defect creation in diamond by hydrogen plasma treatment at room temperature
AU - Yamazaki, Y.
AU - Ishikawa, K.
AU - Samukawa, S.
AU - Yamasaki, S.
N1 - Funding Information:
We are grateful to Dr. M. Ogura at DRC for fruitful discussion. This work was supported by the New Energy and Industrial Technology Development Organization (NEDO).
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2006/4/1
Y1 - 2006/4/1
N2 - The defect creation mechanism of diamond by hydrogen plasma treatment at room temperature was investigated. Electron spin resonance (ESR) observation revealed that hydrogen plasma treatment at room temperature gave rise to a highly defective structure. In contrast, very few defects were created in silicon. The difference of the defect creation mechanism between diamond and Si was discussed on the basis of the existence of sp2 hybridization in diamond network.
AB - The defect creation mechanism of diamond by hydrogen plasma treatment at room temperature was investigated. Electron spin resonance (ESR) observation revealed that hydrogen plasma treatment at room temperature gave rise to a highly defective structure. In contrast, very few defects were created in silicon. The difference of the defect creation mechanism between diamond and Si was discussed on the basis of the existence of sp2 hybridization in diamond network.
KW - Defect creation
KW - Diamond
KW - Hydrogen plasma
KW - Room temperature
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U2 - 10.1016/j.physb.2005.12.084
DO - 10.1016/j.physb.2005.12.084
M3 - Conference article
AN - SCOPUS:33645139796
VL - 376-377
SP - 327
EP - 330
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 1
T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors
Y2 - 24 July 2005 through 29 July 2005
ER -