Defect creation in diamond by hydrogen plasma treatment at room temperature

Y. Yamazaki, K. Ishikawa, S. Samukawa, S. Yamasaki

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)

Abstract

The defect creation mechanism of diamond by hydrogen plasma treatment at room temperature was investigated. Electron spin resonance (ESR) observation revealed that hydrogen plasma treatment at room temperature gave rise to a highly defective structure. In contrast, very few defects were created in silicon. The difference of the defect creation mechanism between diamond and Si was discussed on the basis of the existence of sp2 hybridization in diamond network.

Original languageEnglish
Pages (from-to)327-330
Number of pages4
JournalPhysica B: Condensed Matter
Volume376-377
Issue number1
DOIs
Publication statusPublished - 2006 Apr 1
EventProceedings of the 23rd International Conference on Defects in Semiconductors -
Duration: 2005 Jul 242005 Jul 29

Keywords

  • Defect creation
  • Diamond
  • Hydrogen plasma
  • Room temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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