Defect creation in diamond by hydrogen plasma treatment at room temperature

Y. Yamazaki; K. Ishikawa; S. Samukawa; S. Yamasaki

doi:10.1016/j.physb.2005.12.084

Defect creation in diamond by hydrogen plasma treatment at room temperature

Y. Yamazaki, K. Ishikawa, S. Samukawa, S. Yamasaki

Innovative Energy Research Center

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

The defect creation mechanism of diamond by hydrogen plasma treatment at room temperature was investigated. Electron spin resonance (ESR) observation revealed that hydrogen plasma treatment at room temperature gave rise to a highly defective structure. In contrast, very few defects were created in silicon. The difference of the defect creation mechanism between diamond and Si was discussed on the basis of the existence of sp² hybridization in diamond network.

Original language	English
Pages (from-to)	327-330
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.084
Publication status	Published - 2006 Apr 1
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29

Keywords

Defect creation
Diamond
Hydrogen plasma
Room temperature

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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title = "Defect creation in diamond by hydrogen plasma treatment at room temperature",

abstract = "The defect creation mechanism of diamond by hydrogen plasma treatment at room temperature was investigated. Electron spin resonance (ESR) observation revealed that hydrogen plasma treatment at room temperature gave rise to a highly defective structure. In contrast, very few defects were created in silicon. The difference of the defect creation mechanism between diamond and Si was discussed on the basis of the existence of sp2 hybridization in diamond network.",

keywords = "Defect creation, Diamond, Hydrogen plasma, Room temperature",

author = "Y. Yamazaki and K. Ishikawa and S. Samukawa and S. Yamasaki",

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T1 - Defect creation in diamond by hydrogen plasma treatment at room temperature

AU - Yamazaki, Y.

AU - Ishikawa, K.

AU - Samukawa, S.

AU - Yamasaki, S.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - The defect creation mechanism of diamond by hydrogen plasma treatment at room temperature was investigated. Electron spin resonance (ESR) observation revealed that hydrogen plasma treatment at room temperature gave rise to a highly defective structure. In contrast, very few defects were created in silicon. The difference of the defect creation mechanism between diamond and Si was discussed on the basis of the existence of sp2 hybridization in diamond network.

AB - The defect creation mechanism of diamond by hydrogen plasma treatment at room temperature was investigated. Electron spin resonance (ESR) observation revealed that hydrogen plasma treatment at room temperature gave rise to a highly defective structure. In contrast, very few defects were created in silicon. The difference of the defect creation mechanism between diamond and Si was discussed on the basis of the existence of sp2 hybridization in diamond network.

KW - Defect creation

KW - Diamond

KW - Hydrogen plasma

KW - Room temperature

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DO - 10.1016/j.physb.2005.12.084

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SP - 327

EP - 330

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

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