Abstract
The defect creation mechanism of diamond by hydrogen plasma treatment at room temperature was investigated. Electron spin resonance (ESR) observation revealed that hydrogen plasma treatment at room temperature gave rise to a highly defective structure. In contrast, very few defects were created in silicon. The difference of the defect creation mechanism between diamond and Si was discussed on the basis of the existence of sp2 hybridization in diamond network.
Original language | English |
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Pages (from-to) | 327-330 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 376-377 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2006 Apr 1 |
Event | Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 2005 Jul 24 → 2005 Jul 29 |
Keywords
- Defect creation
- Diamond
- Hydrogen plasma
- Room temperature
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering