Abstract
Using Density Functional Theory (DFT) calculations we modeled the mechanisms of formation of oxygen vacancies and interstitial ions in amorphous HfO2 under electron and hole injection conditions. The results demonstrate that injected electrons and holes can create strongly localised bipolaron states at intrinsic trapping sites in amorphous structure. These bipolarons decompose into stable and mobile O vacancies and interstitial ions upon thermal activation. These mechanisms can contribute to dielectric breakdown of gate oxide films and electro-forming in RRAM cells based on amorphous HfO2.
Original language | English |
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Pages (from-to) | 279-283 |
Number of pages | 5 |
Journal | Microelectronic Engineering |
Volume | 178 |
DOIs | |
Publication status | Published - 2017 Jun 25 |
Externally published | Yes |
Keywords
- Amorphous HfO
- Density Functional Theory
- Electron injection
- Frenkel defects
- RRAM
- Thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering