Abstract
Low temperature (290 °C) area selective regrowth (ASR) by the intermittent injection of TEGa and AsH3 in UHV was applied for the fabrication of ultra-shallow sidewall GaAs tunnel junctions. Tunnel junction characteristics are seriously dependent on the sidewall orientations and the surface treatment conditions just prior to the regrowth. The junction characteristics and those associations with defects were shown in view of the doping characteristics and the photocapacitance results. And the effects of quantization by the reduction of junction area were also shown.
Original language | English |
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Pages (from-to) | 708-713 |
Number of pages | 6 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 69 |
Issue number | 2-3 |
DOIs | |
Publication status | Published - 2008 Feb 1 |
Keywords
- A. Semiconductors
- B. Epitaxial growth
- D. Defects
- D. Electronic structure
- D. Transport properties
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics