Defect aspects in ultra-shallow GaAs sidewall tunnel junctions implemented with molecular layer epitaxy

Yutaka Oyama

doi:10.1016/j.jpcs.2007.07.058

Defect aspects in ultra-shallow GaAs sidewall tunnel junctions implemented with molecular layer epitaxy

Yutaka Oyama

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Low temperature (290 °C) area selective regrowth (ASR) by the intermittent injection of TEGa and AsH₃ in UHV was applied for the fabrication of ultra-shallow sidewall GaAs tunnel junctions. Tunnel junction characteristics are seriously dependent on the sidewall orientations and the surface treatment conditions just prior to the regrowth. The junction characteristics and those associations with defects were shown in view of the doping characteristics and the photocapacitance results. And the effects of quantization by the reduction of junction area were also shown.

Original language	English
Pages (from-to)	708-713
Number of pages	6
Journal	Journal of Physics and Chemistry of Solids
Volume	69
Issue number	2-3
DOIs	https://doi.org/10.1016/j.jpcs.2007.07.058
Publication status	Published - 2008 Feb 1

Keywords

A. Semiconductors
B. Epitaxial growth
D. Defects
D. Electronic structure
D. Transport properties

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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abstract = "Low temperature (290 °C) area selective regrowth (ASR) by the intermittent injection of TEGa and AsH3 in UHV was applied for the fabrication of ultra-shallow sidewall GaAs tunnel junctions. Tunnel junction characteristics are seriously dependent on the sidewall orientations and the surface treatment conditions just prior to the regrowth. The junction characteristics and those associations with defects were shown in view of the doping characteristics and the photocapacitance results. And the effects of quantization by the reduction of junction area were also shown.",

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AB - Low temperature (290 °C) area selective regrowth (ASR) by the intermittent injection of TEGa and AsH3 in UHV was applied for the fabrication of ultra-shallow sidewall GaAs tunnel junctions. Tunnel junction characteristics are seriously dependent on the sidewall orientations and the surface treatment conditions just prior to the regrowth. The junction characteristics and those associations with defects were shown in view of the doping characteristics and the photocapacitance results. And the effects of quantization by the reduction of junction area were also shown.

KW - A. Semiconductors

KW - B. Epitaxial growth

KW - D. Defects

KW - D. Electronic structure

KW - D. Transport properties

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JO - Journal of Physics and Chemistry of Solids

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