Defect activation in willemite-type Zn2GeO4 by nanocrystallization

Yoshihiro Takahashi, Masataka Ando, Kenichiro Iwasaki, Hirokazu Masai, Takumi Fujiwara

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23 Citations (Scopus)

Abstract

We demonstrated the selective introduction of interstitial Zn defects (Zn i) into willemite-type semiconductive Zn2GeO4 by nanocrystallization of 15Li2O-15ZnO-70GeO2 glass. The resulting nanocrystallized glass consisting of Zn2GeO4 exhibited a long-lasting photoluminescence (LLP). It is suggested that the Zni̇ is produced by capturing a zinc ion through six-membered rings of the Zn2GeO4 phase during nanocrystallization and the excess Zni̇ acts as an electron trap for the LLP. This defect activation through nanocrystallization is a promising new approach to functionalization.

Original languageEnglish
Article number071906
JournalApplied Physics Letters
Volume97
Issue number7
DOIs
Publication statusPublished - 2010 Aug 16

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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